Abstract: A CMP tool including a polisher head has a floating head assembly configured to be driven around a rotational axis an upper head assembly disposed within the upper head assembly. An over-rotation limiting pin projects between the floating head assembly and the upper head assembly. A restrictor/lifter receptacle is located to receive the over-rotation limiting pin, the restrictor/lifter receptacle having opposing vertical sidewalls with different length, and a sloped top sidewall.

Abstract: A lighting arrangement for presentation of a first object is disclosed. The arrangement comprises an accent lighting assembly and a decoration lighting assembly. The accent lighting assembly is arranged to provide illumination of the first object, has at least one accent light characteristic, and comprises at least one accent light generating device. The decoration lighting assembly is arranged to provide background lighting of the first object, has at least one decoration light characteristic, and comprises at least one decoration light generating device. The arrangement also comprises at least one sensor, arranged to detect a distance between the sensor and a second object and to generate a signal value representing the distance, and a controller arranged to receive the signal value from the at least one sensor and to adapt the accent light characteristic and the decoration light characteristic based on the signal value. Corresponding use, method and computer program product are also disclosed.

Abstract: A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100) containing in the ring (70). Water and/or nitrogen can be applied to the surface of the semiconductor wafer through orifices (110) contained in the spokes (90).

Abstract: A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100) containing in the ring (70). Water and/or nitrogen can be applied to the surface of the semiconductor wafer through orifices (110) contained in the spokes (90).

Abstract: According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface adapted to couple a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion. The generally circular center portion encloses an area and has an attachment surface area that is less than the area enclosed by the generally circular center portion. The attachment surface area is adapted to couple an inner portion of the polishing pad to the platen. According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface coupling a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface adapted to couple a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion. The generally circular center portion encloses an area and has an attachment surface area that is less than the area enclosed by the generally circular center portion. The attachment surface area is adapted to couple an inner portion of the polishing pad to the platen. According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface coupling a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface adapted to couple a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion. The generally circular center portion encloses an area and has an attachment surface area that is less than the area enclosed by the generally circular center portion. The attachment surface area is adapted to couple an inner portion of the polishing pad to the platen. According to one embodiment of the invention, a chemical mechanical polishing system includes a platen having a first surface coupling a polishing pad thereto. The first surface includes a generally circular center portion and an annular portion surrounding the generally circular center portion.