Abstract: A field emission display (FED) having a correction system with a correction coefficient derived from emission current is presented. Within one embodiment in accordance with the present invention, a field emission display has an anode at the faceplate and a focus structure. The anode potential is held at ground while the focus structure potential is held between, but is not limited to, 40 and 50 volts. The current flowing to the focus structure is measured and used as the basis for the correction coefficient for the field emission display.

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.