Abstract: An integrated circuit capable of monitoring aging effects on an integrated circuit device is disclosed. The integrated circuit includes a control circuit that obtains a clock signal at different frequencies. A sense circuit may receive the clock signal. First and second control signals may be asserted on the integrated circuit with the control circuit. The first control signal may activate a stress mode, and the second control signal may activate a measurement mode. During stress mode, the sense circuit may receive the clock signal. Any changes in predetermined electrical parameters of one or more transistors in the sense circuit may be monitored and measured during the measurement mode. Aging compensation may be performed when aging effect is detected on the sense circuit.

Abstract: Transistors degrade when subjected to voltage stress. Methods are described for reducing this aging problem by applying a reverse voltage to the gates of the circuit on an intermittent or periodic basis. By applying such a voltage for a brief period of time such as one second, the aging process is essentially nullified.

Abstract: Transistors degrade when subjected to voltage stress. Methods are described for reducing this aging problem by applying a reverse voltage to the gates of the circuit on an intermittent or periodic basis. By applying such a voltage for a brief period of time such as one second, the aging process is essentially nullified.