Patents by Inventor Christopher T. Youtsey

Christopher T. Youtsey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7130124
    Abstract: A pitch averaging Bragg grating includes a plurality of grating peaks spaced by different pitch values. By selecting the different pitch values to have an average pitch value equal to a target pitch value, the pitch averaging Bragg grating can be made to perform like a constant pitch Bragg grating having a fixed pitch at the target pitch value. The different pitch values can be multiples of the minimum placement resolution of a production tool to be used to produce the Bragg grating. The pitch averaging Bragg grating can be used in place of constant pitch Bragg gratings in optical devices and systems, such as DFB lasers, DBR lasers, optical spectral filters, multi-wavelength laser arrays, and WDM systems.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: October 31, 2006
    Assignee: Tri Quint Semiconductor, Inc.
    Inventors: Andrew A. Ketterson, Jose L. Jimenez, Christopher T. Youtsey
  • Publication number: 20040218275
    Abstract: A pitch averaging Bragg grating includes a plurality of grating peaks spaced by different pitch values. By selecting the different pitch values to have an average pitch value equal to a target pitch value, the pitch averaging Bragg grating can be made to perform like a constant pitch Bragg grating having a fixed pitch at the target pitch value. The different pitch values can be multiples of the minimum placement resolution of a production tool to be used to produce the Bragg grating. The pitch averaging Bragg grating can be used in place of constant pitch Bragg gratings in optical devices and systems, such as DFB lasers, DBR lasers, optical spectral filters, multi-wavelength laser arrays, and WDM systems.
    Type: Application
    Filed: April 30, 2003
    Publication date: November 4, 2004
    Applicant: TriQuint Semiconductor, Inc.
    Inventors: Andrew A. Ketterson, Jose L. Jimenez, Christopher T. Youtsey
  • Patent number: 6636668
    Abstract: A thermally tunable resonator includes a resonator body having a resonance wavelength which changes as a function of temperature, a trench formed inside the resonator body, and a disk formed inside the trench and which is made from semiconductor layers, the layers being doped to form a forward biased junction. A first electrode, which does not cover the resonator body, is located atop the disk and in electrical contact with the forward biased junction, and a second electrode is located beneath and in electrical contact with the forward biased junction. When current is applied through the electrodes, heat is generated, changing the resonator body's resonance wavelength. Another thermally tunable resonator has a resonator body and heater in which two contact pads are electrically connected to a resistance above the resonator body. When current is applied to the resistance, heat is generated, changing the resonator body's resonance wavelength.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: October 21, 2003
    Assignee: LNL Technologies, Inc.
    Inventors: Kadhair Al-hemyari, Christopher T. Youtsey
  • Patent number: 6579802
    Abstract: A semiconductor dry etching process that provides deep, smooth (RMS of less than approximately 5 nm), and vertical etching of InP-based materials with ICP RIE using a chlorinated plasma with the addition of hydrogen gas. Inert gases such as nitrogen, argon, or both may also be included. To produce relatively high anisotropy with exceptionally smooth surfaces, the amount of hydrogen gas added preferably exceeds the volumetric measure of chlorinated gas in standard cubic centimeter per minute (sccm); at a ratio of greater than 1:1. The present invention provides an improved dry etching process for InP-based semiconductor materials that yields deep, vertical etch profiles with improved surface smoothness (i.e., morphology) and high manufacturing etch rates.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: June 17, 2003
    Assignee: LNL Technologies, Inc.
    Inventors: Thomas E. Pierson, Christopher T. Youtsey
  • Patent number: 6571039
    Abstract: An optical waveguide includes a first waveguide section providing weak confinement of an optical signal in a direction generally transverse to its propagation direction, a second waveguide section providing strong confinement of the optical signal in all directions relative to the propagation direction, a tapered neck between the first and second waveguide sections to optically couple those waveguide sections, and a core defined through the first and second waveguide sections and tapered neck, and through which the optical signal may propagate in the propagation direction. A method for making such an optical waveguide.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: May 27, 2003
    Assignee: LNL Technologies, Inc.
    Inventors: Kadhair Al-hemyari, Christopher T. Youtsey
  • Publication number: 20010025826
    Abstract: A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N2) gas. Etching of InP-based semiconductors using an appropriate Cl2/N2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.
    Type: Application
    Filed: February 28, 2001
    Publication date: October 4, 2001
    Inventors: Thomas E. Pierson, Christopher T. Youtsey, Seng-Tiong Ho, Seoijin Park