Patents by Inventor Christopher V. Luers

Christopher V. Luers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR PRODUCING SINGLE CRYSTAL INGOTS DOPED WITH VOLATILE DOPANTS
    Publication number: 20180291524
    Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.
    Type: Application
    Filed: April 29, 2016
    Publication date: October 11, 2018
    Inventors: Soubir Basak, Gaurab Samanta, Salvador Zepeda, Christopher V. Luers, Steven L. Kimbel, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Roberto Scala, Richard J. Phillips, Tirumani N. Swaminathan, Jihong Chen, Stephen Wayne Palmore, Peter Drury Wildes
  • Single crystal silicon ingot having a high arsenic concentration
    Patent number: 7132091
    Abstract: A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 ?·cm.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: November 7, 2006
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Milind Kulkarni, Mohsen Banan, Christopher V. Luers
  • Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder
    Publication number: 20030061985
    Abstract: A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.0025 &OHgr;·cm, and wafers sliced therefrom. The present invention is also directed to a method of doping a silicon melt so that the foregoing ingot may be produced. Specifically, the method entails introducing arsenic dopant below the surface of a silicon melt, rather than on the surface, using a dopant feeder that is at least partially submersed in the silicon melt.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 3, 2003
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Milind Kulkarni, Mohsen Banan, Christopher V. Luers