Patents by Inventor Christopher Vincent Jahnes
Christopher Vincent Jahnes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7098476Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.Type: GrantFiled: September 24, 2004Date of Patent: August 29, 2006Assignee: International Business Machines CorporationInventors: Katherina E. Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger
-
Patent number: 6953984Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.Type: GrantFiled: April 19, 2004Date of Patent: October 11, 2005Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Laurent Claude Perraud
-
Patent number: 6815329Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.Type: GrantFiled: April 2, 2002Date of Patent: November 9, 2004Assignee: International Business Machines CorporationInventors: Katherina E. Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger
-
Publication number: 20040195659Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.Type: ApplicationFiled: April 19, 2004Publication date: October 7, 2004Applicant: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Laurent Claude Perraud
-
Patent number: 6759321Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.Type: GrantFiled: July 25, 2002Date of Patent: July 6, 2004Assignee: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger
-
Patent number: 6737725Abstract: A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics.Type: GrantFiled: May 13, 2002Date of Patent: May 18, 2004Assignee: International Business Machines CorporationInventors: Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Satyanarayana Venkata Nitta, Kevin S. Petrarca, Sampath Purushothaman, Katherine Lynn Saenger, Stanley Joseph Whitehair
-
Patent number: 6724086Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.Type: GrantFiled: June 23, 2000Date of Patent: April 20, 2004Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Laurent Claude Perraud
-
Patent number: 6497963Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.Type: GrantFiled: June 23, 2000Date of Patent: December 24, 2002Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Laurent Claude Perraud
-
Publication number: 20020158337Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.Type: ApplicationFiled: April 2, 2002Publication date: October 31, 2002Inventors: Katherina E. Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger
-
Publication number: 20020127844Abstract: A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics.Type: ApplicationFiled: May 13, 2002Publication date: September 12, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Satyanarayana Venkata Nitta, Kevin S. Petrarca, Sampath Purushothaman, Katherine Lynn Saenger, Stanley Joseph whitehair
-
Patent number: 6448655Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.Type: GrantFiled: April 28, 1998Date of Patent: September 10, 2002Assignee: International Business Machines CorporationInventors: Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger
-
Patent number: 6448176Abstract: The present invention relates to lithographic methods for forming a dual relief pattern in a substrate, and the application of such methods to fabricating multilevel interconnect structures in semiconductor chips by a Dual Damascene process in which dual relief cavities formed in a dielectric are filled with conductive material to form the wiring and via levels. The invention comprises a twice patterned single mask layer Dual Damascene process modified by the addition of an easy-to-integrate sidewall liner to protect organic interlevel and intralevel dielectrics from potential damage induced by photoresist stripping steps during lithographic rework. The invention further comprises a method for forming a dual pattern hard mask which may be used to form dual relief cavities for use in Dual Damascene processing, said dual pattern hard mask comprising a first set of one or more layers with a first pattern, and a second set of one or more layers with a second pattern.Type: GrantFiled: October 30, 2000Date of Patent: September 10, 2002Assignee: International Business Machines CorporationInventors: Alfred Grill, John Patrick Hummel, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Katherine Lynn Saenger
-
Patent number: 6413852Abstract: A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics.Type: GrantFiled: August 31, 2000Date of Patent: July 2, 2002Assignee: International Business Machines CorporationInventors: Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Satyanarayana Venkata Nitta, Kevin S. Petrarca, Sampath Purushothaman, Katherine Lynn Saenger, Stanley Joseph Whitehair
-
Publication number: 20020033535Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.Type: ApplicationFiled: April 28, 1998Publication date: March 21, 2002Inventors: KATHERINA BABICH, ALESSANDRO CALLEGARI, STEPHEN ALAN COHEN, ALFRED GRILL, CHRISTOPHER VINCENT JAHNES, VISHNUBHAI VITTHALBHAI PATEL, SAMPATH PURUSHOTHAMAN, KATHERINE LYNN SAENGER
-
Patent number: 6346484Abstract: The present invention relates to formation of air gaps in metal/insulator interconnect structures, and to the use of supercritical fluid (SCF)-based methods to extract sacrificial place-holding materials to form air gaps in a structure. Supercritical fluids have gas-like diffusivities and viscosities, and very low or zero surface tension, so SCF's can penetrate small access holes and/or pores in a perforated or porous bridge layer to reach the sacrificial material. Examples of SCFs include CO2 (with or without cosolvents or additives) and ethylene (with or without cosolvents or additives). In a more general embodiment, SCF-based methods for forming at least partially enclosed air gaps in structures that are not interconnect structures are disclosed.Type: GrantFiled: August 31, 2000Date of Patent: February 12, 2002Assignee: International Business Machines CorporationInventors: John Michael Cotte, Christopher Vincent Jahnes, Kenneth John McCullough, Wayne Martin Moreau, Satyanarayana Venkata Nitta, Katherine Lynn Saenger, John Patrick Simons
-
Patent number: 6346747Abstract: A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition process is disclosed. Electronic devices containing insulating layers of thermally stable carbon-based low dielectric constant materials that are prepared by the method are further disclosed. In order to render the carbon-based low dielectric constant film thermally stable, i.e., at a temperature of at least 400° C., the films are heat treated at a temperature of not less than 350° C. for at least 0.5 hour. To enable the fabrication of thermally stable carbon-based low dielectric constant film, specific precursor materials such as cyclic hydrocarbons should be used, for instance, cyclohexane or benzene.Type: GrantFiled: June 9, 1999Date of Patent: February 12, 2002Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel
-
Publication number: 20010022398Abstract: Metal and insulator interconnect structures are described incorporating one or more layers of fluorinated dielectric insulation, one or more conductive wiring levels interconnected by vias and capping and/or liner materials to physically isolate the wiring levels and vias from the fluorinated dielectric such as fluorinated diamond like carbon which has a low dielectric constant. The invention overcomes the problem that can arise when fluorine in the fluorinated dielectric insulation reacts with other materials in the interconnect structure to produce unwanted fluorine-containing compounds that can interfere with the structure's mechanical integrity or interconnect function.Type: ApplicationFiled: April 19, 2001Publication date: September 20, 2001Inventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Katherine Lynn Saenger
-
Patent number: 6265779Abstract: Metal and insulator interconnect structures are described incorporating one or more layers of fluorinated dielectric insulation, one or more conductive wiring levels interconnected by vias and capping and/or liner materials to physically isolate the wiring levels and vias from the fluorinated dielectric such as fluorinated diamond like carbon which has a low dielectric constant. The invention overcomes the problem that can arise when fluorine in the fluorinated dielectric insulation reacts with other materials in the interconnect structure to produce unwanted fluorine-containing compounds that can interfere with the structure's mechanical integrity or interconnect function.Type: GrantFiled: August 11, 1998Date of Patent: July 24, 2001Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Katherine Lynn Saenger
-
Patent number: 6214482Abstract: A dielectric layer for use in a magneto-optic storage medium contains a compound glass of SiO2—MO2, SiO2—M2O3, or SiO2—M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.Type: GrantFiled: April 7, 1994Date of Patent: April 10, 2001Assignee: Information Business Machines CorporationInventors: Christopher Vincent Jahnes, Fletcher Jones, Joseph Skinner Logan, Michael Allen Russak
-
Patent number: 6147009Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.Type: GrantFiled: June 29, 1998Date of Patent: November 14, 2000Assignee: International Business Machines CorporationInventors: Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Laurent Claude Perraud