Patents by Inventor Christopher Vineis
Christopher Vineis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230051953Abstract: Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel.Type: ApplicationFiled: August 15, 2022Publication date: February 16, 2023Applicant: SiOnyx, LLCInventors: Martin U. PRALLE, Christopher VINEIS
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Publication number: 20140191354Abstract: Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized.Type: ApplicationFiled: March 13, 2014Publication date: July 10, 2014Applicant: SiOnyx, Inc.Inventor: Christopher Vineis
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Patent number: 8698272Abstract: Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.Type: GrantFiled: December 21, 2011Date of Patent: April 15, 2014Assignee: SiOnyx, Inc.Inventors: Christopher Vineis, James Carey, Xia Li
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Publication number: 20140027774Abstract: Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate.Type: ApplicationFiled: May 15, 2012Publication date: January 30, 2014Applicant: SiOnyx, Inc.Inventors: Xia Li, Christopher Vineis, Martin U. Pralle
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Publication number: 20130001553Abstract: Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.Type: ApplicationFiled: December 21, 2011Publication date: January 3, 2013Applicant: SiOnyx, Inc.Inventors: Christopher Vineis, James Carey, Xia Li
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Publication number: 20120292729Abstract: Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm.Type: ApplicationFiled: May 15, 2012Publication date: November 22, 2012Applicant: SiOnyx, Inc.Inventor: Christopher Vineis
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Publication number: 20120291859Abstract: A photovoltaic device and methods of manufacturing a photovoltaic device are disclosed. A photovoltaic device includes a first photovoltaic cell, a second photovoltaic cell, a semiconductor layer, and a doped layer. The second photovoltaic cell is in electrical communication with the first photovoltaic cell. The semiconductor layer includes a textured portion. The doped layer is configured to create a back surface field, the doped layer disposed between a proximal layer of the second photovoltaic cell and the semiconductor layer.Type: ApplicationFiled: May 17, 2011Publication date: November 22, 2012Inventors: Christopher Vineis, Martin U. Pralle, James E. Carey
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Publication number: 20120111396Abstract: A method for making a semiconductor device includes providing a semiconductor material and doping at least a portion of the semiconductor material to form at least one doped region. A portion of the semiconductor material is removed with a pulsed laser from at least one first region to form at least one adjacent second region.Type: ApplicationFiled: May 4, 2011Publication date: May 10, 2012Applicant: SiOnyx, Inc.Inventors: Stephen D. Saylor, Jason Sickler, James Carey, Christopher Vineis, Xia Li
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Publication number: 20120104461Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: January 12, 2012Publication date: May 3, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Christopher Leitz, Christopher Vineis, Richard Westhoff, Vicky Yang, Matthew Currie
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Publication number: 20110012172Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: September 29, 2010Publication date: January 20, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Christopher Leitz, Christopher Vineis, Richard Westhoff, Vicky Yang, Matthew Currie
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Patent number: 7829442Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: GrantFiled: November 16, 2007Date of Patent: November 9, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Richard Westhoff, Vicky K. Yang, Matthew T. Currie, Christopher Vineis, Christopher Leitz
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Patent number: 7375385Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: GrantFiled: August 22, 2003Date of Patent: May 20, 2008Assignee: AmberWave Systems CorporationInventors: Richard Westhoff, Vicky Yang, Matthew Currie, Christopher Vineis, Christopher Leitz
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Patent number: 7368308Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: GrantFiled: September 15, 2005Date of Patent: May 6, 2008Assignee: AmberWave Systems CorporationInventors: Christopher Vineis, Vicky Yang, Matthew Currie, Richard Westhoff, Christopher Leitz
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Publication number: 20080079024Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: November 16, 2007Publication date: April 3, 2008Inventors: Richard Westhoff, Vicky Yang, Matthew Currie, Christopher Vineis, Christopher Leitz
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Publication number: 20060174818Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.Type: ApplicationFiled: March 9, 2006Publication date: August 10, 2006Applicant: AmberWave SystemsInventors: Eugene Fitzgerald, Richard Westhoff, Matthew Currie, Christopher Vineis, Thomas Langdo
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Patent number: 7049627Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: GrantFiled: August 22, 2003Date of Patent: May 23, 2006Assignee: AmberWave Systems CorporationInventors: Christopher Vineis, Vicky Yang, Matthew Currie, Richard Westhoff, Christopher Leitz
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Publication number: 20060009012Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: September 15, 2005Publication date: January 12, 2006Applicant: AmberWave Systems CorporationInventors: Christopher Leitz, Christopher Vineis, Richard Westhoff, Vicky Yang, Matthew Currie
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Publication number: 20040087117Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: August 22, 2003Publication date: May 6, 2004Applicant: AmberWave Systems CorporationInventors: Christopher Leitz, Christopher Vineis, Richard Westhoff, Vicky Yang, Matthew Currie
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Publication number: 20040075105Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.Type: ApplicationFiled: August 22, 2003Publication date: April 22, 2004Applicant: AmberWave Systems CorporationInventors: Christopher Leitz, Christopher Vineis, Richard Westhoff, Vicky Yang, Matthew Currie