Abstract: Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.

Abstract: Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.

Abstract: Adsorbent reactors for removing carbon dioxide (CO2) from the atmosphere with several types of sealing door valves, ranging from a single valve element to multiple valve elements, are provided. The sealing door valves are configured to open to allow gases into the reactor, such as allowing ambient air to enter during adsorption, and can close to seal the reactor, such as allowing vacuum conditions to be created inside the reactor and/or steam to be injected into the reactor during desorption. The valves are designed to create minimum resistance to valve motion, minimum obstruction to gas flow when open, minimum allowance of fluid passage when closed, and to minimize dead space within the reactor.

Abstract: Adsorbent reactors for removing carbon dioxide (CO2) from the atmosphere with several types of sealing door valves, ranging from a single valve element to multiple valve elements, are provided. The sealing door valves are configured to open to allow gases into the reactor, such as allowing ambient air to enter during adsorption, and can close to seal the reactor, such as allowing vacuum conditions to be created inside the reactor and/or steam to be injected into the reactor during desorption. The valves are designed to create minimum resistance to valve motion, minimum obstruction to gas flow when open, minimum allowance of fluid passage when closed, and to minimize dead space within the reactor.

Abstract: Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.

Abstract: Adsorbent reactors for removing carbon dioxide (CO2) from the atmosphere with several types of sealing door valves, ranging from a single valve element to multiple valve elements, are provided. The sealing door valves are configured to open to allow gases into the reactor, such as allowing ambient air to enter during adsorption, and can close to seal the reactor, such as allowing vacuum conditions to be created inside the reactor and/or steam to be injected into the reactor during desorption. The valves are designed to create minimum resistance to valve motion, minimum obstruction to gas flow when open, minimum allowance of fluid passage when closed, and to minimize dead space within the reactor.