Abstract: A heat transportation mechanism that is thermally conductive, but not electrically conductive, is provided so as to permit transportation of heat generated by a semiconductor device die to the exterior of a semiconductor device package. Embodiments can use a thermally conductive polymer structure, added to the package mold compound, to transport heat through the mold compound. The thermally conductive polymer structure can be fixed to the semiconductor device die prior to molding or can be included in an overmolding compound slug prior to performing the overmolding process. Flexibility of placement of the thermally conductive polymer structure is provided by using dielectric compounds.

Abstract: A heat transportation mechanism that is thermally conductive, but not electrically conductive, is provided so as to permit transportation of heat generated by a semiconductor device die to the exterior of a semiconductor device package. Embodiments can use a thermally conductive polymer structure, added to the package mold compound, to transport heat through the mold compound. The thermally conductive polymer structure can be fixed to the semiconductor device die prior to molding or can be included in an overmolding compound slug prior to performing the overmolding process. Flexibility of placement of the thermally conductive polymer structure is provided by using dielectric compounds.

Abstract: A device comprises a semiconductor package including a first integrated circuit (IC) die including a plurality of through silicon vias (TSVs). The TSVs are formed of conductive material that extend through the first IC die from an outer surface on a first side of the die to an outer surface of a second side of the die. The package further includes first electrical connections contacting the first side of the first IC die, and second electrical connections contacting the second side of the first IC die. The first electrical connections are independent of the second electrical connections. Molding compound encapsulates the first IC die and the first and second electrical connections. The semiconductor package is mounted on a substrate so that the first and second sides of the IC die are oriented perpendicular to the substrate.

Abstract: An electronic component test device capable of testing electronic components in a plurality of test configurations. The device includes a probe head for providing a plurality of probe contact structures to an electronic component to be tested. The device includes an interconnect board coupled to the probe head. The interconnect board includes a plurality of conductive terminals, each of a first subset of the plurality of conductive terminals is coupled to one of a group of electrical signal lines for coupling to different types of external signals. The interconnect board includes a plurality of conductive lines. Each conductive line is coupled between a corresponding one of a plurality of conductive terminals in a second subset of the plurality of conductive terminals and a terminal for coupling to one of the plurality of probe contact structures.

Abstract: A heat transportation mechanism that is thermally conductive, but not electrically conductive, is provided so as to permit transportation of heat generated by a semiconductor device die to the exterior of a semiconductor device package. Embodiments can use a thermally conductive polymer structure, added to the package mold compound, to transport heat through the mold compound. The thermally conductive polymer structure can be fixed to the semiconductor device die prior to molding or can be included in an overmolding compound slug prior to performing the overmolding process. Flexibility of placement of the thermally conductive polymer structure is provided by using dielectric compounds.

Abstract: A device comprises a semiconductor package including a first integrated circuit (IC) die including a plurality of through silicon vias (TSVs). The TSVs are formed of conductive material that extend through the first IC die from an outer surface on a first side of the die to an outer surface of a second side of the die. The package further includes first electrical connections contacting the first side of the first IC die, and second electrical connections contacting the second side of the first IC die. The first electrical connections are independent of the second electrical connections. Molding compound encapsulates the first IC die and the first and second electrical connections. The semiconductor package is mounted on a substrate so that the first and second sides of the IC die are oriented perpendicular to the substrate.

Abstract: The present invention includes a process for forming an electrical device. In one embodiment, the process includes applying a solid patternable film over a substrate and forming a conductive material over the substrate while the solid patternable film overlies the substrate, wherein the conductive material extends at least partially within an opening in the patternable film. In another embodiment, the process includes applying a patterned film over a substrate having a pad and exposing the patterned film and the substrate to energy. The patterned film includes a first region that includes a conductor and a second region that does not have a conductor. The energy of the exposure forms an electrical connection between the conductor and the pad.