Abstract: A formation test probe and a formation test system and method for implementing a self-drilling probe are disclosed. In some embodiments, a test probe includes a body having a channel therethrough to a frontside port, and further includes drill-in tubing disposed within the channel and having a front tip that is extensible from the frontside port. An exciter is disposed within the body in contact with the drill-in tubing and operably configured to induce resonant vibration in the drill-in tubing during a drill-in phase of a formation test cycle.

Abstract: A formation test probe and a formation test system and method for implementing a self-drilling probe are disclosed. In some embodiments, a test probe includes a body having a channel therethrough to a frontside port, and further includes drill-in tubing disposed within the channel and having a front tip that is extensible from the frontside port. An exciter is disposed within the body in contact with the drill-in tubing and operably configured to induce resonant vibration in the drill-in tubing during a drill-in phase of a formation test cycle.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: A reconfigurable device for terahertz (THz) or infrared (IR) ranges that includes a base substrate, a lower array attached to the base substrate, and an upper array attached to the base substrate and at least partially suspended over the lower array. Activation of the reconfigurable device causes the upper array to mechanically flex towards the lower array so that electrical contact is made therebetween. Methods of fabricating and operating the reconfigurable device are also provided.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: A reconfigurable device for terahertz (THz) or infrared (IR) ranges that includes a base substrate, a lower array attached to the base substrate, and an upper array attached to the base substrate and at least partially suspended over the lower array. Activation of the reconfigurable device causes the upper array to mechanically flex towards the lower array so that electrical contact is made therebetween. Methods of fabricating and operating the reconfigurable device are also provided.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.