Patents by Inventor Christopher W. Dix

Christopher W. Dix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9819174
    Abstract: Techniques are provided to control hotswap operations with programmable logic devices (PLDs). In particular, a MOSFET is provided to limit an in-rush current drawn from a power supply by capacitive components of an electronic assembly when it is plugged into the live, power supply. A controller with an algorithm is provided to control the MOSFET based on the in-rush current detected at the MOSFET. As such, a feedback control loop is established to selectively bias the gate of the MOSFET based on the detected in-rush current. The algorithm may limit the in-rush current based on a Safe Operating Area (SOA) of the MOSFET. The hotswap process may include multiple phases each with a voltage and/or current limit modeling the voltages and currents of the SOA. The algorithm may transition through the phases with the respective current and/or voltage limits during the hotswap process.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 14, 2017
    Assignee: Lattice Semiconductor Corporation
    Inventors: Christopher W. Dix, Cleo Mui, Cheng-Jen Gwo, Joel Coplen, Srirama Chandra
  • Publication number: 20160226241
    Abstract: Techniques are provided to control hotswap operations with programmable logic devices (PLDs). In particular, a MOSFET is provided to limit an in-rush current drawn from a power supply by capacitive components of an electronic assembly when it is plugged into the live, power supply. A controller with an algorithm is provided to control the MOSFET based on the in-rush current detected at the MOSFET. As such, a feedback control loop is established to selectively bias the gate of the MOSFET based on the detected in-rush current. The algorithm may limit the in-rush current based on a Safe Operating Area (SOA) of the MOSFET. The hotswap process may include multiple phases each with a voltage and/or current limit modeling the voltages and currents of the SOA. The algorithm may transition through the phases with the respective current and/or voltage limits during the hotswap process.
    Type: Application
    Filed: January 29, 2015
    Publication date: August 4, 2016
    Inventors: Christopher W. Dix, Cleo Mui, Cheng-Jen Gwo, Joel Coplen, Srirama Chandra
  • Publication number: 20090037160
    Abstract: In accordance with an embodiment of the present invention, a method of serving IBIS data may include determining a circuit specified for signal integrity simulation. IBIS data may be obtained for the circuit specified, from which polynomials may be determined to be representative of at least a portion of the IBIS data. The polynomial information determined may be stored in a file with indexing for enabling its subsequent selective retrieval by way of a request for the IBIS data for the specified circuit.
    Type: Application
    Filed: July 31, 2007
    Publication date: February 5, 2009
    Inventor: Christopher W. Dix
  • Patent number: 7187157
    Abstract: In accordance with an embodiment of the present invention, two transistors are simultaneously controlled by a controller to control the application of power to a load and monitor a voltage level at the load. The controller may control the application of power to a number of loads simultaneously and may further provide voltage tracking for the loads.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: March 6, 2007
    Assignee: Lattice Semiconductor Corporation
    Inventor: Christopher W. Dix