Abstract: An approach is provided to computationally identify biomarkers associated with diseases and medical conditions. The procedure first identifies biomarkers individually at the DNA, RNA and proteome levels. Then provides a methodology to integrate the single-source biomarkers and perform dimensionality reduction in order to detect the most informative subset of biomarkers that better distinguish samples between two biological conditions (disease vs normal samples). The dimensionality reduction step minimizing biases due to unnecessary or partially correlated biomarkers and significantly reduces the search space of possible biomarkers. An algorithm is also described for the automated optimization of the proposed DNA-seq and RNA-seq pipelines.

Abstract: An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Abstract: This invention provides microfluidic devices with graphene films as architectural materials and methods of fabrication and use thereof in X-ray analysis.

Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Abstract: An embodiment according to the invention provides methods for making interlayer covalent bonds in bilayer, trilayer, and multilayer graphene. Raman spectroscopy is used to characterize the resulting material, and the Raman peak at approximately 1330 cm?1 coincides with the characteristic peak of diamond and polycrystalline nanodiamond peaks published in the art. This indicates that the process induces the formation of sp3 carbon-carbon (C—C) bonds (similar to the ones in diamond) between the graphene layers. The graphene bilayer or multilayer converts to sp3 bonded carbon only partially, as the Raman spectrum also indicates a strong component of graphene still remaining in the bilayer or multilayer.

Abstract: This invention provides microfluidic devices with graphene films as architectural materials and methods of fabrication and use thereof in X-ray analysis.

Abstract: An approach is provided to computationally identify biomarkers associated with diseases and medical conditions. The procedure first identifies biomarkers individually at the DNA, RNA and proteome levels. Then provides a methodology to integrate the single-source biomarkers and perform dimensionality reduction in order to detect the most informative subset of biomarkers that better distinguish samples between two biological conditions (disease vs normal samples). The dimensionality reduction step minimizing biases due to unnecessary or partially correlated biomarkers and significantly reduces the search space of possible biomarkers. An algorithm is also described for the automated optimization of the proposed DNA-seq and RNA-seq pipelines.

Abstract: A method of exfoliating graphite into graphene uses a sequence of flow and sonication on graphite suspensions. Graphite particles after intense mixing/grinding in a liquid are found to be altered, graphite having curled-up edges, which increases its sensitivity to ultrasound. Quadrupled graphene yield is achieved through introducing chaotic flow pretreatment.

Abstract: A method of exfoliating graphite into graphene uses a sequence of flow and sonication on graphite suspensions. Graphite particles after intense mixing/grinding in a liquid are found to be altered, graphite having curled-up edges, which increases its sensitivity to ultrasound. Quadrupled graphene yield is achieved through introducing chaotic flow pretreatment.

Abstract: Techniques are disclosed for identifying the likely functionality and sub-cellular localization of individual proteins by first creating a protein-protein interaction network where protein pairs are created from data available from databases and experimental results, and by guessing potential interacting protein pairs where no data exists. Inside each protein pair, mutual likely functionality and localization annotations are made using the known functionalities and localization of the two proteins. The resulting annotated proteins are clustered according to similarity of their annotations and for each cluster iterative mutual annotations in each protein pair enrich the previous functional annotations until no more functionality annotations can be made and results in proteins with at least one assigned functionality and localization duet. Ranking of the resulting assignments is done using the specificity and confidence of the assignment.

Abstract: A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Abstract: A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.

Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Abstract: Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions.

Abstract: A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Abstract: Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions.

Abstract: According to an aspect of the present principles, there is provided a method and an authentication apparatus. The method includes arranging a plurality of graphene resistors in parallel or series. The method further includes forming a unique identification code based on respective temperatures emanating from or respective voltages output from the plurality of graphene resistors when the plurality of graphene resistors are in a powered state.

Abstract: A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.