Abstract: A system and method that improves and enhances the quality of step-scan Fourier Transform Infrared spectroscopy data. The system and method enables the removal of dark voltage with greater accuracy, provides access to previously unobtainable IR spectral information data which is amplified by the disclosed system and method. The system and method removes dark interferogram voltage from an interferogram of interest obtained during nanosecond or microsecond step-scan measurement. The system and method includes a programmable high gain setting to amplify both signal and noise into the analog-to-digital quantization range to allow signal averaging for obtaining additional bits of resolution. The system and method also accounts for and corrects intrinsic offset voltages introduced by the electronics of the disclosed system.

Abstract: A system and method that improves and enhances the quality of step-scan Fourier Transform Infrared spectroscopy data. The system and method enables the removal of dark voltage with greater accuracy, provides access to previously unobtainable IR spectral information data which is amplified by the disclosed system and method. The system and method removes dark interferogram voltage from an interferogram of interest obtained during nanosecond or microsecond step-scan measurement. The system and method includes a programmable high gain setting to amplify both signal and noise into the analog-to-digital quantization range to allow signal averaging for obtaining additional bits of resolution. The system and method also accounts for and corrects intrinsic offset voltages introduced by the electronics of the disclosed system.

Abstract: Semiconductor devices, logic devices, libraries to represent logic devices, and methods for designing and fabricating the same are disclosed. The semiconductor devices include a substrate comprising sapphire or diamond, an active layer disposed on the substrate, the active layer having a thickness tSi and comprising a channel region having a length L, where L/tSi is above 7 and an oxide layer disposed on the active layer.

Abstract: Disclosed herein are methods for canceling acoustic reverberations caused when acoustic energy impinges a medium. In one method, a series of positive pulses of acoustic energy are transmitted and the amplitudes of the resulting acoustic reverberations are measured. Negative pulses of acoustic energy are then transmitted having amplitudes equal to the immediately preceding received acoustic reverberation and at a time later than the positive pulses so that the acoustic reverberations are driven to a null.