Abstract: A method for manufacturing a transistor device that includes forming an oxide layer over a substrate, forming a gate structure over the oxide layer, depositing a silicon nitride layer over the oxide layer and the gate structure, anisotropic etching the silicon nitride layer to remove portions of the silicon nitride layer, wherein remaining portions of the silicon nitride layer form nitride spacers contiguous with the gate structure, and a portion of the oxide layer beneath the removed portions of the silicon nitride layer is also removed, cleaning oxide layer, applying a diluted hydrogen fluoride solution to the oxide layer to form a substantially uniform thickness of the oxide layer, and implanting ions through the oxide layer having a substantially uniform thickness to form source and drain regions of the transistor device.