Abstract: The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 1015 atom/cm3.

Abstract: The present application provides a method of fabricating a semiconductor device. The method includes steps of forming a transistor in a substrate; depositing an insulative layer on the substrate; forming a first trench penetrating through the insulative layer to expose a portion of a first impurity region of the transistor; performing a first cyclic process comprising a first sequence of a first deposition step and a first removal step to deposit a conductive material in the first trench until a height of the conductive material in the first trench exceeds a predetermined height; filling the first trench with the conductive material after the first cyclic process; forming a storage capacitor contacting the first conductive feature; and depositing an isolation layer to cover the insulative layer and the storage capacitor.

Abstract: The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step and a removal step to deposit a conductive material in the trench until the deposition step has been performed is equal to a first preset number of times and a number of the times the removal step has been performed is equal to a second preset number of times, and filling the trench with the conductive material after the cyclic process.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 1015 atom/cm3.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: An anti-theft method for an electric vehicle is provided. The anti-theft method for an electric vehicle includes the following steps. An electronic anti-theft function is activated. Whether the electric vehicle is moving is determined. Whether the temperature of the motor is greater than a critical value is determined. When the temperature of the motor of the electric vehicle exceeds the critical value, the motor is reversed to generate a reverse resistance.

Abstract: An anti-theft method for an electric vehicle is provided. The anti-theft method for an electric vehicle includes the following steps. An electronic anti-theft function is activated. Whether the electric vehicle is moving is determined. Whether the temperature of the motor is greater than a critical value is determined. When the temperature of the motor of the electric vehicle exceeds the critical value, the motor is reversed to generate a reverse resistance.

Abstract: A battery regenerative breaking control method applied in an electric vehicle is provided. The battery regenerative breaking control method includes: determining whether a battery pack is at a protection status when the electric vehicle is detected to be at a regenerative breaking status; recording a current battery error time point and obtaining a time threshold according to a current speed of the electric vehicle if it is determined that the battery pack is at the protection status; determining whether a current time is smaller than the time threshold; entering a first stage to adjust a pulse width modulation (PWM) duty cycle if the current time is smaller than the time threshold; and entering a second stage to adjust a PWM frequency if the current time is larger than the time threshold.

Abstract: An automatic correction method for a pin connection and a motor driving device are provided. The automatic correction method includes: sensing a driven motor to generate a plurality of sensing results corresponding to a plurality of pin connection modes between a Hall sensor and a motor controller, and counting a number of changes of the plurality of sensing results to obtain a plurality of numbers of external interruptions corresponding to the plurality of pin connection modes; obtaining a correct pin connection mode in the plurality of pin connection modes according to the plurality of numbers of external interruptions; and operating the Hall sensor and the motor controller to be electrically coupled via the correct pin connection mode.

Abstract: An automatic correction method for a pin connection and a motor driving device are provided. The automatic correction method includes: sensing a driven motor to generate a plurality of sensing results corresponding to a plurality of pin connection modes between a Hall sensor and a motor controller, and counting a number of changes of the plurality of sensing results to obtain a plurality of numbers of external interruptions corresponding to the plurality of pin connection modes; obtaining a correct pin connection mode in the plurality of pin connection modes according to the plurality of numbers of external interruptions; and operating the Hall sensor and the motor controller to be electrically coupled via the correct pin connection mode.

Abstract: A battery regenerative breaking control method applied in an electric vehicle is provided. The battery regenerative breaking control method includes: determining whether a battery pack is at a protection status when the electric vehicle is detected to be at a regenerative breaking status; recording a current battery error time point and obtaining a time threshold according to a current speed of the electric vehicle if it is determined that the battery pack is at the protection status; determining whether a current time is smaller than the time threshold; entering a first stage to adjust a pulse width modulation (PWM) duty cycle if the current time is smaller than the time threshold; and entering a second stage to adjust a PWM frequency if the current time is larger than the time threshold.

Abstract: A low voltage threshold adjusting method is provided and includes the following steps: detecting whether a present voltage is lower than a low voltage threshold; detecting whether a present current exceeds a preset current threshold in response to that the present voltage is lower than the low voltage threshold; detecting whether a present temperature exceeds a preset temperature in response to that the present current exceeds the preset current threshold; checking whether a current state of charge (SOC) is higher than a preset SOC in response to that the present temperature does not exceed the preset temperature; and decreasing the low voltage threshold in response to that the current SOC is higher than the preset SOC.

Abstract: A low voltage threshold adjusting method is provided and includes the following steps: detecting whether a present voltage is lower than a low voltage threshold; detecting whether a present current exceeds a preset current threshold in response to that the present voltage is lower than the low voltage threshold; detecting whether a present temperature exceeds a preset temperature in response to that the present current exceeds the preset current threshold; checking whether a current state of charge (SOC) is higher than a preset SOC in response to that the present temperature does not exceed the preset temperature; and decreasing the low voltage threshold in response to that the current SOC is higher than the preset SOC.

Abstract: A method for controlling capability of radio access technology and a user equipment using the same are provided. The user equipment supports a first radio access technology (RAT) and a second radio access technology, and the method includes following steps. An elementary field (EF) stored in a universal integrated circuit card (UICC) is read. It is determined whether a data field of the elementary field is available, wherein the data field stores service information related to the second radio access technology. It is determined whether to activate or to deactivate the second radio access technology according to whether the data field is available or not.

Abstract: In a wireless communication system, when a user equipment needs to deactivate its E-UTRA function due to a network related failure cause, a waiting period is set according to the mobility information of the user equipment. When the waiting period has elapsed after deactivating the E-UTRA function, the user equipment is configured to reactivate the E-UTRA function.

Abstract: In a wireless communication system, when a user equipment needs to deactivate its E-UTRA function due to a network related failure cause, a waiting period is set according to the mobility information of the user equipment. When the waiting period has elapsed after deactivating the E-UTRA function, the user equipment is configured to reactivate the E-UTRA function.

Abstract: A mobile communication device is provided with a wireless module and a controller module. The wireless module performs wireless transmissions and receptions to and from a Long Term Evolution (LTE)-based network and a non-LTE network. The controller module blocks any outgoing Circuit-Switched (CS) service in response to finishing a CS Fallback (CSFB) call and having an ongoing Packet-Switched (PS) session with the non-LTE network, and performs an idle mode cell reselection procedure via the wireless module to camp back to the LTE-based network in response to the outgoing CS service having been blocked. Also, the controller module unblocks the outgoing CS service in response to camping back to the LTE-based network.

Abstract: A mobile communication device is provided with a wireless module and a controller module. The wireless module performs wireless transmissions and receptions to and from a Long Term Evolution (LTE)-based network and a non-LTE network. The controller module blocks any outgoing Circuit-Switched (CS) service in response to finishing a CS Fallback (CSFB) call and having an ongoing Packet-Switched (PS) session with the non-LTE network, and performs an idle mode cell reselection procedure via the wireless module to camp back to the LTE-based network in response to the outgoing CS service having been blocked. Also, the controller module unblocks the outgoing CS service in response to camping back to the LTE-based network.