Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.

Abstract: Integrated circuit (IC) devices with diodes formed in a subfin between a support structure of an IC device and one or more nanoribbon stacks are disclosed. To alleviate challenges of limited semiconductor cross-section provided by the subfin, etch depths in the subfin (i.e., depths of recesses in the subfin formed as a part of forming the diodes) are selectively optimized and varied. Deeper recesses are made in subfin portions at which diode terminals (e.g., anodes and cathodes) are formed, to increase the semiconductor cross-section in those portions, thus providing improved subfin contacts. Shallower recesses (or no recesses) are made in subfin portion between the diode terminals, to increase subfin retention. Thus, subfin diodes may be provided in a manner that enables improved diode conductance and/or improved current carrying capabilities while advantageously using substantially the same etch processes as those used for forming nanoribbon-based transistors elsewhere in the IC device.

Abstract: Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one radio frequency (RF) circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices.

Abstract: Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one radio frequency (RF) circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices.