Abstract: A power amplifier module includes a transistor and transistor control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to control the transistor in a stand-by mode of operation.

Abstract: A power amplifier module includes a transistor and transistor control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to control the transistor in a stand-by mode of operation.

Abstract: A radio-frequency switch includes a series field-effect transistor, a shunt field-effect transistor having a gate node, and shunt arm control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to the gate node of the shunt field-effect transistor when the radio-frequency switch is in a stand-by mode of operation.

Abstract: Systems, apparatuses and methods are disclosed providing a semiconductor die comprising a semiconductor substrate and a radio-frequency (RF) switch including one or more series field-effect transistors (FETs) and one or more shunt FETs, each of the one or more series FETs and one or more shunt FETs having a respective gate node, the RF switch being configured to receive an RF signal from a power amplifier module and provide the RF signal to an antenna. The semiconductor die may further comprise an internal regulator voltage source configured to provide an internal regulator voltage when the RF switch is in a stand-by mode and shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt FETs when the RF switch is in the stand-by mode.

Abstract: A radio-frequency switch includes a series field-effect transistor, a shunt field-effect transistor having a gate node, and shunt arm control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to the gate node of the shunt field-effect transistor when the radio-frequency switch is in a stand-by mode of operation.

Abstract: Systems, apparatuses and methods are disclosed providing a semiconductor die comprising a semiconductor substrate and a radio-frequency (RF) switch including one or more series field-effect transistors (FETs) and one or more shunt FETs, each of the one or more series FETs and one or more shunt FETs having a respective gate node, the RF switch being configured to receive an RF signal from a power amplifier module and provide the RF signal to an antenna. The semiconductor die may further comprise an internal regulator voltage source configured to provide an internal regulator voltage when the RF switch is in a stand-by mode and shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt FETs when the RF switch is in the stand-by mode.

Abstract: Power amplifier (PA), regardless of the process used for the manufacturing of its devices, suffers from a nonlinear output capacitance that has significant impact on various aspects of the PA performance. This output capacitance is dependent on the large output voltage swing. Accordingly a compensation capacitance is added at the output of the PA that has a behavior that is inverse respective of the output voltage of that of the output capacitance of the PA. Connecting the compensation capacitor in parallel to the PA output capacitance, results in a total capacitance that is the sum of the output capacitance and its compensation capacitance. The total output capacitance is therefore essentially stable throughout the output voltage swing.

Abstract: Achievement of robust stability of a power amplifier (PA) that allows the sharing of the ground between the driver stages and the output stage is shown. A controlled amount of negative feedback is used to neutralize the local positive feedback that results from the driver-to-output stage ground sharing in the signal path, for example, a radio frequency (RF) signal path. The solution keeps a strong drive and a good performance of the PA. Exemplary embodiments are shown for the PA positive feedback neutralization. A first embodiment uses a ground signal divider while another embodiment uses a ground signal divider weighting technique.

Abstract: Power amplifier (PA), regardless of the process used for the manufacturing of its devices, suffers from a nonlinear output capacitance that has significant impact on various aspects of the PA performance. This output capacitance is dependent on the large output voltage swing. Accordingly a compensation capacitance is added at the output of the PA that has a behavior that is inverse respective of the output voltage of that of the output capacitance of the PA. Connecting the compensation capacitor in parallel to the PA output capacitance, results in a total capacitance that is the sum of the output capacitance and its compensation capacitance. The total output capacitance is therefore essentially stable throughout the output voltage swing.

Abstract: Achievement of robust stability of a power amplifier (PA) that allows the sharing of the ground between the driver stages and the output stage is shown. A controlled amount of negative feedback is used to neutralize the local positive feedback that results from the driver-to-output stage ground sharing in the signal path, for example, a radio frequency (RF) signal path. The solution keeps a strong drive and a good performance of the PA. Exemplary embodiments are shown for the PA positive feedback neutralization. A first embodiment uses a ground signal divider while another embodiment uses a ground signal divider weighting technique.

Abstract: A phase generator includes at least one input port for accepting a reference signal having a frequency, a plurality of n output ports, n>4, and a network of phase-shifting elements coupled in a circularly-symmetrical configuration between the at least one input port and the output ports. The network of phase-shifting elements has a symmetry increment of 360/n degrees. The phase generator generates at the output ports respective polyphase signals at the frequency, the polyphase signals having respective phases that are consecutive integer multiples of 360/n degrees.