Patents by Inventor Chu-Jih Su

Chu-Jih Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector with modified region in barrier and absorption structures
    Patent number: 11935969
    Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: March 19, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang
  • Semiconductor photo-detecting device
    Patent number: 11935981
    Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: March 19, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
  • Semiconductor photo-detecting device
    Patent number: 11335826
    Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: May 17, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
  • SEMICONDUCTOR PHOTO-DETECTING DEVICE
    Publication number: 20210408311
    Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.
    Type: Application
    Filed: June 30, 2021
    Publication date: December 30, 2021
    Inventors: Chu-Jih SU, Chia-Hsiang CHOU, Wei-Chih PENG, Wen-Luh LIAO, Chao-Shun HUANG, Hsuan-Le LIN, Shih-Chang LEE, Mei Chun LIU, Chen OU
  • SEMICONDUCTOR PHOTO-DETECTING DEVICE
    Publication number: 20210408310
    Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Chu-Jih Su, Chao-Shun Huang, Shiuan-Leh Lin, Shih-Chang Lee, Wen-Luh Liao, Mei-Chun Liu
  • Photodetector
    Publication number: 20210151612
    Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 20, 2021
    Inventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang