Patents by Inventor Chu Li Chao
Chu Li Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220367230Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.Type: ApplicationFiled: September 22, 2021Publication date: November 17, 2022Applicant: Industrial Technology Research InstituteInventors: Ming-Hsien Wu, Wei-Hung Kuo, Chu-Li Chao, Chu-Yin Hung, Yu-Hsiang Chang
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Patent number: 8674393Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.Type: GrantFiled: December 21, 2010Date of Patent: March 18, 2014Assignee: Industrial Technology Research InstituteInventors: Yih-Der Guo, Chu-Li Chao, Yen-Hsiang Fang, Ruey-Chyn Yeh, Kun-Fong Lin
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Patent number: 8604487Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.Type: GrantFiled: December 19, 2011Date of Patent: December 10, 2013Assignee: Industrial Technology Research InstituteInventors: Yen-Hsiang Fang, Chu-Li Chao, Chih-Wei Hu, Yih-Der Guo
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Patent number: 8502190Abstract: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.Type: GrantFiled: December 1, 2011Date of Patent: August 6, 2013Assignee: Industrial Technology Research InstituteInventors: Po-Chun Liu, Chu-Li Chao, Yih-Der Guo
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Patent number: 8482103Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.Type: GrantFiled: December 9, 2010Date of Patent: July 9, 2013Assignee: Industrial Technology Research InstituteInventors: Hsun-Chih Liu, Chen-Zi Liao, Yen-Hsiang Fang, Rong Xuan, Chu-Li Chao
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Patent number: 8221547Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.Type: GrantFiled: July 22, 2008Date of Patent: July 17, 2012Assignee: Industrial Technology Research InstituteInventors: Po-Chun Liu, Yih-Der Guo, Tung-Wei Chi, Chu-Li Chao
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Publication number: 20120161148Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.Type: ApplicationFiled: December 19, 2011Publication date: June 28, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yen-Hsiang Fang, Chu-Li Chao, Chih-Wei Hu, Yih-Der Guo
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Publication number: 20120153338Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.Type: ApplicationFiled: December 21, 2010Publication date: June 21, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yih-Der Guo, Chu-Li Chao, Yen-Hsiang Fang, Ruey-Chyn Yeh, Kun-Fong Lin
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Publication number: 20120146190Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.Type: ApplicationFiled: December 9, 2010Publication date: June 14, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hsun-Chih Liu, Chen-Zi Liao, Yen-Hsiang Fang, Rong Xuan, Chu-Li Chao
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Publication number: 20120119220Abstract: A nitride semiconductor substrate includes an epitaxy substrate, a patterned nitride semiconductor pillar layer, a nitride semiconductor layer, and a mask layer is provided. The nitride semiconductor pillar layer includes a plurality of first patterned arranged hollow structures and a plurality of second patterned arranged hollow structures formed among the first patterned arranged hollow structures. The second patterned arranged hollow structures have nano dimensions. The nitride semiconductor pillar layer is formed on the epitaxy substrate, and the nitride semiconductor layer is formed on the nitride semiconductor pillar layer. The mask layer covers surfaces of the nitride semiconductor pillar layer and the epitaxy substrate.Type: ApplicationFiled: January 20, 2012Publication date: May 17, 2012Applicant: Industrial Technology Research InstituteInventors: Yih-Der Guo, Suh-Fang Lin, Wei-Hung Kuo, Po-Chun Liu, Tung-Wei Chi, Chu-Li Chao, Jenq-Dar Tsay
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Publication number: 20120074383Abstract: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.Type: ApplicationFiled: December 1, 2011Publication date: March 29, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Po-Chun Liu, Chu-Li Chao, Yih-Der Guo
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Patent number: 8093081Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.Type: GrantFiled: September 18, 2009Date of Patent: January 10, 2012Assignee: Industrial Technology Research InstituteInventors: Po-Chun Liu, Chu-Li Chao, Yih-Der Guo
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Publication number: 20100243987Abstract: A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed.Type: ApplicationFiled: September 18, 2009Publication date: September 30, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Po-Chun Liu, Chu-Li Chao, Yih-Der Guo
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Publication number: 20100090312Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer.Type: ApplicationFiled: September 14, 2009Publication date: April 15, 2010Applicant: Industrial Technology Research InstituteInventors: Yih-Der Guo, Suh-Fang Lin, Wei-Hung Kuo, Po-Chun Liu, Tung-Wei Chi, Chu-Li Chao, Jenq-Dar Tsay
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Patent number: 7663153Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.Type: GrantFiled: January 25, 2008Date of Patent: February 16, 2010Assignees: Industrial Technology Research Institute, National Tsing Hua UniversityInventors: Chen-Yang Huang, Hao-Min Ku, Shiuh Chao, Chu-Li Chao, Rong Xuan
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Publication number: 20090274883Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.Type: ApplicationFiled: July 22, 2008Publication date: November 5, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Po-Chun Liu, Yih-Der Guo, Tung-Wei Chi, Chu-Li Chao
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Publication number: 20090114935Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.Type: ApplicationFiled: January 25, 2008Publication date: May 7, 2009Inventors: Chen-Yang Huang, Hao-Min Ku, Shiuh Chao, Chu-Li Chao, Rong Xuan
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Patent number: 7378792Abstract: A light-emitting device of high light extraction efficiency comprises a first substrate, a light-emitting chip positioned on the first substrate and configured to emit light beams, a fluorescent material positioned on the light-emitting chip, a photonic crystal positioned on the fluorescent material and a reflector positioned on the photonic crystal and configured to reflect the light beam to the fluorescent material. The first substrate is preferably a metallic cup, and the light-emitting chip is positioned at the bottom of the metallic cup. The photonic crystal includes a second substrate and a plurality of protrusions positioned on the second substrate. Each of the protrusions includes a bottom end positioned on the second substrate and a tip portion smaller than the bottom end. The plurality of protrusions can be triangular pillars, semicircular pillars, sinusoid pillars, pyramids, or cones.Type: GrantFiled: October 31, 2006Date of Patent: May 27, 2008Assignee: Industrial Technology Research InstituteInventors: Chen Yang Huang, Cheng Wei Chu, Chu Li Chao, Jim Yong Chi
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Publication number: 20080042546Abstract: A light-emitting device of high light extraction efficiency comprises a first substrate, a light-emitting chip positioned on the first substrate and configured to emit light beams, a fluorescent material positioned on the light-emitting chip, a photonic crystal positioned on the fluorescent material and a reflector positioned on the photonic crystal and configured to reflect the light beam to the fluorescent material. The first substrate is preferably a metallic cup, and the light-emitting chip is positioned at the bottom of the metallic cup. The photonic crystal includes a second substrate and a plurality of protrusions positioned on the second substrate. Each of the protrusions includes a bottom end positioned on the second substrate and a tip portion smaller than the bottom end. The plurality of protrusions can be triangular pillars, semicircular pillars, sinusoid pillars, pyramids, or cones.Type: ApplicationFiled: October 31, 2006Publication date: February 21, 2008Applicant: Industrial Technology Research InstituteInventors: Chen Yang Huang, Cheng Wei Chu, Chu Li Chao, Jim Yong Chi