Abstract: An air replenishing fume hood includes a cabinet, a door set, an air replenishing unit and an air guiding unit. The cabinet has an inner casing defining an operating chamber and having an air inlet and an air outlet. A side of the cabinet includes an operation window. A first air passage is formed between the inner casing and the cabinet. The door set includes an outer door leaf adapted to open or close the operation window, and an inner door leaf adapted to open or close the air inlet. An end of the air replenishing unit extends into an external space via an outdoor tube, and another end of the air replenishing unit is connected to the first air passage via an extension tube. The air guiding unit includes an end connected to the air outlet, and another end extending into the external space or a collection tank.

Abstract: An air replenishing fume hood includes a cabinet, a door set, an air replenishing unit and air guiding unit. The cabinet has an inner casing defining an operating chamber and having an air inlet and an air outlet. A side of the cabinet includes an operation window. A first air passage is formed between the inner casing and the cabinet. The door set includes an outer door leaf adapted to open or close the operation window, and an inner door leaf adapted to open or close the air inlet. An end of the air replenishing unit extends into an external space via an outdoor tube, and another end of the air replenishing unit is connected to the first air passage via an extension tube. The air guiding unit includes an end connected to the air outlet, and another end extending into the external space or a collection tank.

Abstract: A semiconductor structure including at least one spare cell is disclosed. The semiconductor structure includes a first conductive line coupled to a power supply, and a second conductive line coupled to a complementary power supply. At least one spare cell is decoupled from the first or second conductive line for being selectively connected to at least one normally functioning electronic components, the first conductive line and the second conductive line only during a rerouting process for reducing leakage power of the semiconductor structure.

Abstract: A semiconductor structure includes a first conductive line for connecting to a power supply, and a second conductive line for connecting to a complementary power supply. At least one spare cell is decoupled from the first or second conductive line for being selectively connected to at lease one normal cell, the first conductive line and the second conductive line only when an engineering change order is placed.

Abstract: A scheme for addressing memory cells in random access memory arrays includes bit lines divided into a plurality of segments. Each pair of bit lines has a sense amp at each end coupled to both bit lines in the pair. Word lines address memory cells coupled to each bit line of the pair. When a pair of memory cells is accessed, the bit lines are electrically divided so that one memory cell is coupled to one sense amp through one bit line, and the other memory cell is coupled to the other sense amp through the other bit line. The memory cells can be coupled to the bit lines through segment lines, with each segment line connecting a subset of the memory cells to a bit line, in order to reduce capacitances presented to the sense amps. An alternating linear array of sense amps and bit line pairs can be used to increase overall density of the memory array by allowing sense amps to access more than one bit line pair. The bit lines are addressed so that each sense amp receives data from one one bit line pair at a time.

Abstract: A semiconductor memory includes a memory array (10) that is operable to be addressed in either the page mode or the static column decode mode. A column address transparent latch (20) is provided which is controlled to either directly input a column address to a column decoder (26) or to latch the address in response to the generation of the column address strobe. A sequence detect circuit (30) detects the sequence to the row address strobe and the column address strobe to determine whether the page mode or the static column decode mode is generated. The sequence detect circuit (30) generates a Y-enable signal in a circuit (31) for control of the latch (20).