Patents by Inventor Chu Ron-Fu

Chu Ron-Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers
    Patent number: 5780358
    Abstract: A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.
    Type: Grant
    Filed: April 8, 1996
    Date of Patent: July 14, 1998
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Mei Sheng Zhou, Chu Ron-Fu