Patents by Inventor Chu S. Tran

Chu S. Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perpendicular magnetic recording media with oxide-containing exchange coupling layer
    Patent number: 8747628
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: June 10, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • PERPENDICULAR MAGNETIC RECORDING MEDIA WITH OXIDE-CONTAINING EXCHANGE COUPLING LAYER
    Publication number: 20120186974
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: April 3, 2012
    Publication date: July 26, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Perpendicular magnetic recording media with oxide-containing exchange coupling layer
    Patent number: 8168310
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: May 1, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • PERPENDICULAR MAGNETIC RECORDING MEDIA WITH OXIDE-CONTAINING EXCHANGE COUPLING LAYER
    Publication number: 20110141621
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran