Patents by Inventor Chu-Yin Hung
Chu-Yin Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12087612Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.Type: GrantFiled: September 22, 2021Date of Patent: September 10, 2024Assignee: Industrial Technology Research InstituteInventors: Ming-Hsien Wu, Wei-Hung Kuo, Chu-Li Chao, Chu-Yin Hung, Yu-Hsiang Chang
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Publication number: 20220367230Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.Type: ApplicationFiled: September 22, 2021Publication date: November 17, 2022Applicant: Industrial Technology Research InstituteInventors: Ming-Hsien Wu, Wei-Hung Kuo, Chu-Li Chao, Chu-Yin Hung, Yu-Hsiang Chang
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Patent number: 9553176Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.Type: GrantFiled: September 9, 2015Date of Patent: January 24, 2017Assignee: Industrial Technology Research InstituteInventors: Jing-Yi Yan, Chih-Chieh Hsu, Hsiao-Chiang Yao, Chu-Yin Hung
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Publication number: 20150380530Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Inventors: Jing-Yi Yan, Chih-Chieh Hsu, Hsiao-Chiang Yao, Chu-Yin Hung
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Patent number: 9165947Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.Type: GrantFiled: March 23, 2012Date of Patent: October 20, 2015Assignee: Industrial Technology Research InstituteInventors: Jing-Yi Yan, Chih-Chieh Hsu, Hsiao-Chiang Yao, Chu-Yin Hung
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Patent number: 8928046Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.Type: GrantFiled: October 13, 2010Date of Patent: January 6, 2015Assignee: Industrial Technology Research InstituteInventors: Jing-Yi Yan, Chu-Yin Hung, Hsiao-Chiang Yao, Yen-Yu Wu, Yen-Shih Huang
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Publication number: 20140217400Abstract: A semiconductor element structure and a manufacturing method for the same are provided. The semiconductor element structure may comprise a gate electrode, a dielectric layer, an active layer, a source, a drain and a protective layer. The active layer and the gate electrode are disposed on opposing sides of the dielectric layer. The source is disposed on the active layer. The drain is disposed on the active layer. The protective layer is disposed on the active layer. The protective layer may have a hydrogen content less than or equal to 0.1 at % and a sheet resistance higher than or equal to 10? 10 Ohm/sq.Type: ApplicationFiled: January 31, 2014Publication date: August 7, 2014Applicant: Industrial Technology Research InstituteInventors: Jing-Yi YAN, Chu-Yin HUNG, Liang-Hsiang CHEN, Hsiao-Chiang YAO, Wu-Wei TSAI
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Publication number: 20130140635Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.Type: ApplicationFiled: March 23, 2012Publication date: June 6, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Jing-Yi Yan, Chih-Chieh Hsu, Hsiao-Chiang Yao, Chu-Yin Hung
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Publication number: 20110254061Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.Type: ApplicationFiled: October 13, 2010Publication date: October 20, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Jing-Yi Yan, Chu-Yin Hung, Hsiao-Chiang Yao, Yen-Yu Wu, Yen-Shih Huang