Abstract: Methods and tools for repairing a semiconductor mask are provided. The method includes steps of positioning the semiconductor mask within a repair chamber including a repair tool, supplying a first gas and a second gas into the repair chamber. The first gas includes a repair material for repairing a defect on the mask, and the second gas includes a polar gas and assists deposition of the repair material on the semiconductor mask. The method further includes steps of activating the repair tool such that the repair tool interacts with the first and second gases to deposit the repair material at the site of the defect to repair the semiconductor mask and removing the repaired semiconductor mask from the repair chamber. A dimension of the deposited repair material is less than about 32 nanometers.