Abstract: A device includes: a first vertical stack of nanostructures over a substrate; a second vertical stack of nanostructures over the substrate; a first source/drain region abutting the first vertical stack of nanostructures; a second source/drain region abutting the second vertical stack of nanostructures; a first gate structure wrapping around the nanostructures of the first vertical stack; a second gate structure wrapping around the nanostructures of the second vertical stack; a dielectric layer over the first and second source/drain regions; and an isolation structure that extends from an upper surface of the dielectric layer to a level below upper surfaces of the first and second source/drain regions, the isolation structure being between the first source/drain region and the second source/drain region.

Abstract: An integrated circuit includes a first nanostructure transistor having a first gate electrode and a second nanostructure transistor having a second gate electrode. A dielectric isolation structure is between the first and second gate electrodes. A gate connection metal is on a portion of the top surface of the first gate electrode and on a portion of a top surface of the second gate electrode. The gate connection metal is patterned to expose other portions of the top surfaces of the first and second gate electrodes adjacent to the dielectric isolation structure. A conductive via contacts the exposed portion of the top surface of the second gate electrode.

Abstract: An integrated circuit includes a nanosheet transistor having a plurality of stacked channels, a gate electrode surrounding the stacked channels, a source/drain region, and a source/drain contact. The integrated circuit includes a first dielectric layer between the gate metal and the source/drain contact, a second dielectric layer on the first dielectric layer, and a cap metal on the first gate metal and on a hybrid fin structure. The second dielectric layer is on the hybrid fin structure between the cap metal and the source/drain contact.

Abstract: A positioning system for positioning a to-be-positioned device includes three or more reference objects each providing individual unique feature information associated with a two-dimensional coordinate. A positioning device includes an image capturing unit obtaining image data of three of the reference objects, and a processing unit obtaining, based on the image data, three pixel positions corresponding respectively to the three reference objects in the image data, obtaining the two-dimensional coordinate of the location of the three reference objects, and estimating a positioning coordinate of the to-be-positioned device using a triangulation positioning method based on the three pixel positions, a focal length used for obtaining the image data and the two-dimensional coordinates.

Abstract: A positioning system for positioning a to-be-positioned device includes three or more reference objects each providing individual unique feature information associated with a two-dimensional coordinate. A positioning device includes an image capturing unit obtaining image data of three of the reference objects, and a processing unit obtaining, based on the image data, three pixel positions corresponding respectively to the three reference objects in the image data, obtaining the two-dimensional coordinate of the location of the three reference objects, and estimating a positioning coordinate of the to-be-positioned device using a triangulation positioning method based on the three pixel positions, a focal length used for obtaining the image data and the two-dimensional coordinates.