Patents by Inventor Chua-Gi You

Chua-Gi You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
    Patent number: 6686606
    Abstract: The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: February 3, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Oh Jeong, Yang-Sun Kim, Myung-Koo Hur, Young-Jae Tak, Mun-Pyo Hong, Chi-Woo Kim, Jang-Soo Kim, Chua-Gi You
  • Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
    Publication number: 20030160252
    Abstract: The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed.
    Type: Application
    Filed: March 18, 2003
    Publication date: August 28, 2003
    Inventors: Chang-Oh Jeong, Yang-Sun Kim, Myung-Koo Hur, Young-Jae Tak, Mun-Pyo Hong, Chi-Woo Kim, Jang-Soo Kim, Chua-Gi You