Abstract: This disclosure provides a wafer processing method having the following steps: providing a wafer (10), an immersion device (100), a carrier (200), and a spray device (300); turning the wafer (10) from a horizontal manner to an upright manner; upright placing the wafer (10) into the immersion device (100) for immersion; taking the wafer (10) out from the immersion device (100) and placing that onto the carrier (200) horizontally; spraying a liquid on the wafer (10) by the spray device (300); rinsing the wafer (10); rotating the carrier (200) to dry the wafer (10). Multiple steps for processing the wafer (10) may be performed on the same carrier (200) to accelerate the process.

Abstract: A substrate processing system includes a substrate processing set and a substrate holding unit. The substrate processing set includes a substrate supporting part for supporting a vertical substrate. The substrate holding unit includes two cantilevers and two substrate holding parts. Each of the substrate holding parts is respectively located on each of the cantilevers. The two substrate holding parts are used for holding the substrate vertically. When the substrate holding unit moves next to the substrate processing set and the two substrate holding parts touch the substrate, the two substrate holding parts hold the substrate.

Abstract: A substrate processing system includes a substrate processing set and a substrate holding unit. The substrate processing set includes a substrate supporting part for supporting a vertical substrate. The substrate holding unit includes two cantilevers and two substrate holding parts. Each of the substrate holding parts is respectively located on each of the cantilevers. The two substrate holding parts are used for holding the substrate vertically. When the substrate holding unit moves next to the substrate processing set and the two substrate holding parts touch the substrate, the two substrate holding parts hold the substrate.

Abstract: A constant temperature gas/liquid mixture generating system for using in wafer drying process includes: an interior tank; a first liquid supplying device for supplying liquid IPA to the interior tank; a gas supplying device for supplying nitrogen to the interior tank; an exhausting device for exhausting IPA and nitrogen mixture from said constant temperature gas/liquid mixture generating system; an exterior tank, surrounding the interior tank; a second liquid supplying device for supplying a second liquid to the exterior tank; a temperature control device for controlling the second liquid to be within a desired temperature range; and a draining device for draining the second liquid out of the exterior tank.