Patents by Inventor Chuan-Cheng Tu
Chuan-Cheng Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210217926Abstract: A light-emitting apparatus comprises a board having a plurality of conductive channels penetrating thereof; a plurality of light emitting units for emitting different color lights, disposed on the board and electrically connected to the plurality of conductive channels; and an opaque layer arranged on the board for preventing the plurality of light emitting units from crosstalk, and comprising a plurality of holes for exposing and separating the plurality of light emitting units in a top view.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Inventors: Min-Hsun HSIEH, Tzer-Perng CHEN, Jen-Chau WU, Yuh-Ren SHIEH, Chuan-Cheng TU
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Patent number: 10978615Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.Type: GrantFiled: March 24, 2020Date of Patent: April 13, 2021Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Tzer-Perng Chen, Jen-Chau Wu, Yuh-Ren Shieh, Chuan-Cheng Tu
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Publication number: 20200227591Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.Type: ApplicationFiled: March 24, 2020Publication date: July 16, 2020Inventors: Min-Hsun HSIEH, Tzer-Perng CHEN, Jen-Chau WU, Yuh-Ren SHIEH, Chuan-Cheng TU
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Publication number: 20150295154Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a carrier having a plurality of first metal contacts; forming a light-emitting structure comprising a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer; bonding the light-emitting structure to the carrier; forming a cap layer on a side of the light-emitting structure opposite to the carrier; and cutting the carrier and the cap layer to form a chip-scale LED unit.Type: ApplicationFiled: April 15, 2015Publication date: October 15, 2015Inventors: Chuan-Cheng TU, Jen-Chau WU, Yuh-Ren SHIEH, Tzer-Perng CHEN, Min-Hsun HSIEH
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Patent number: 9018655Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.Type: GrantFiled: November 18, 2013Date of Patent: April 28, 2015Assignee: Epistar CorporationInventors: Chuan-Cheng Tu, Jen-Chau Wu, Yuh-Ren Shieh, Tzer-Perng Chen, Min-Hsun Hsieh
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Patent number: 8969907Abstract: A flip-chip light emitting diode comprises a transparent base-plate, at least a first electrical semi-conductive layer, a light emitting layer, a second electrical semi-conductive layer, at least a first ohmic contact, a second ohmic contact and a third ohmic contact are installed above the transparent base-plate. The at least first ohmic contact is electrically connected to the third ohmic contact through a connection passage. A first electrode area is formed above the second electrical semi-conductive layer. The second ohmic contact is disposed above the transparent base-plate and adjacent to a side of the first ohmic contact. A second electrode area is formed on the second ohmic contact.Type: GrantFiled: July 21, 2014Date of Patent: March 3, 2015Assignee: RGB Consulting Co., Ltd.Inventor: Chuan-Cheng Tu
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Publication number: 20140327033Abstract: A flip-chip light emitting diode comprises a transparent base-plate, at least a first electrical semi-conductive layer, a light emitting layer, a second electrical semi-conductive layer, at least a first ohmic contact, a second ohmic contact and a third ohmic contact are installed above the transparent base-plate. The at least first ohmic contact is electrically connected to the third ohmic contact through a connection passage. A first electrode area is formed above the second electrical semi-conductive layer. The second ohmic contact is disposed above the transparent base-plate and adjacent to a side of the first ohmic contact. A second electrode area is formed on the second ohmic contact.Type: ApplicationFiled: July 21, 2014Publication date: November 6, 2014Inventor: Chuan-Cheng TU
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Patent number: 8823043Abstract: A flip-chip light emitting diode comprises a transparent base-plate, at least a first electrical semi-conductive layer, a light emitting layer, a second electrical semi-conductive layer, at least a first ohmic contact, a second ohmic contact and a third ohmic contact are installed above the transparent base-plate. The at least first ohmic contact is electrically connected to the third ohmic contact through a connection passage. A first electrode area is formed above the second electrical semi-conductive layer. The second ohmic contact is disposed above the transparent base-plate and adjacent to a side of the first ohmic contact. A second electrode area is formed on the second ohmic contact.Type: GrantFiled: October 26, 2012Date of Patent: September 2, 2014Assignee: RGB Consulting Co., Ltd.Inventor: Chuan-Cheng Tu
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Patent number: 8816386Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.Type: GrantFiled: January 16, 2014Date of Patent: August 26, 2014Assignee: Epistar CorporationInventors: Tzer-Perng Chen, Jen-Chau Wu, Chuan-Cheng Tu, Yuh-Ren Shieh
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Patent number: 8791475Abstract: A light-emitting diode includes a first electrode, a conductive substrate layer, a reflective layer, a first electrical semiconductor layer, a active layer, a second electrical semiconductor layer, and at least one second electrode. The conductive substrate layer is formed on the first electrode. The reflective layer is formed on the conductive substrate layer. The first electrical semiconductor layer is formed on the reflective layer. The active layer is formed on the first electrical semiconductor layer. The second electrical semiconductor layer is formed on the active layer. The at least one second electrode is formed on the second electrical semiconductor layer. At least one third electrode is additionally disposed under the second electrical semiconductor layer. At least one connection channel is disposed between the second electrode and the third electrode, so that the second electrode and the third electrode are electrically connected.Type: GrantFiled: June 3, 2011Date of Patent: July 29, 2014Assignee: RGB Consulting Co., Ltd.Inventor: Chuan-Cheng Tu
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Publication number: 20140186979Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.Type: ApplicationFiled: November 18, 2013Publication date: July 3, 2014Applicant: EPISTAR CORPORATIONInventors: Chuan-Cheng TU, Jen-Chau WU, Yuh-Ren SHIEH, Tzer-Perng CHEN, Min-Hsun HSIEH
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Publication number: 20140131760Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: EPISTAR CORPORATIONInventors: Tzer-Perng CHEN, Jen-Chau WU, Chuan-Cheng TU, Yuh-Ren SHIEH
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Publication number: 20120181546Abstract: A light-emitting diode includes a first electrode, a conductive substrate layer, a reflective layer, a first electrical semiconductor layer, a active layer, a second electrical semiconductor layer, and at least one second electrode. The conductive substrate layer is formed on the first electrode. The reflective layer is formed on the conductive substrate layer. The first electrical semiconductor layer is formed on the reflective layer. The active layer is formed on the first electrical semiconductor layer. The second electrical semiconductor layer is formed on the active layer. The at least one second electrode is formed on the second electrical semiconductor layer. At least one third electrode is additionally disposed under the second electrical semiconductor layer. At least one connection channel is disposed between the second electrode and the third electrode, so that the second electrode and the third electrode are electrically connected.Type: ApplicationFiled: June 3, 2011Publication date: July 19, 2012Inventor: Chuan-Cheng TU
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Patent number: 8101959Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.Type: GrantFiled: September 29, 2010Date of Patent: January 24, 2012Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Chuan-Cheng Tu
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Publication number: 20110300337Abstract: A substrate for light-emitting diode (LED) has a top surface being divided into a plurality of first units and a plurality of second units. The first units respectively have a plurality of first microstructures, and the second units respectively have a plurality of second microstructures different from the first microstructures of the first units. Any two adjacent ones of the first units have one second unit located therebetween, while the second units are located around each of the first units. The second units are micro-roughened surfaces that have a relatively small average height difference between tops and bottoms thereof, allowing bridging structures formed on the second units to have bottom portions with uniform thickness, which in turn enables increased good yield of LED production.Type: ApplicationFiled: April 21, 2011Publication date: December 8, 2011Inventor: Chuan-Cheng TU
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Publication number: 20110084304Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.Type: ApplicationFiled: September 29, 2010Publication date: April 14, 2011Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Chuan-Cheng Tu
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Patent number: 7923841Abstract: A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.Type: GrantFiled: April 17, 2009Date of Patent: April 12, 2011Assignee: RGB Consulting Co., Ltd.Inventor: Chuan-Cheng Tu
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Patent number: 7816695Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.Type: GrantFiled: January 16, 2009Date of Patent: October 19, 2010Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Chuan-Cheng Tu
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Patent number: 7745833Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.Type: GrantFiled: August 1, 2005Date of Patent: June 29, 2010Assignee: Epistar CorporationInventors: Cheng-Chung Yang, Shao-Kun Ma, Chuan-Cheng Tu, Jen-Chau Wu
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Patent number: RE43411Abstract: A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer.Type: GrantFiled: February 14, 2008Date of Patent: May 29, 2012Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Chuan-Cheng Tu