Abstract: The present disclosure provides an electronic device including a first sensing circuit, a second sensing circuit and a power line. The first sensing circuit includes a first sensing unit and a first transistor, and a first end of the first sensing unit is coupled to a control end of the first transistor. The second sensing circuit includes a second sensing unit and a second transistor, and a first end of the second sensing unit is coupled to a control end of the second transistor. A first end of the first transistor and a first end of the second transistor are coupled to the power line.

Abstract: A method of forming bifacial solar cell structure is described. The method comprises: performing boron diffusion on an upper surface of a semiconductor substrate to form a P+ region and a boron silicon glass (BSG) layer on the P+ region; stripping the BSG layer to expose the P+ region and stripping a blocking layer on a lower surface of the semiconductor substrate simultaneously; forming a first anti-reflection coating layer on the P+ region; forming sacrifice film on the first anti-reflection coating layer; performing phosphorus diffusion on the lower surface to form an N+ region and a phosphorus silicon glass (PSG) layer on the N+ region; stripping the PSG layer on the N+ region to expose the N+ region and stripping the sacrifice film on the first anti-reflection coating layer simultaneously; and forming a second anti-reflection coating layer on the N+ region.

Abstract: An electrode structure is disclosed in the present invention and includes a first conductive electrode and a second conductive electrode. The first conductive electrode includes a first busbar electrode member and a first finger electrode member. A portion of the first busbar electrode member above a first diffusion pattern is electrically contacted with the first diffusion pattern by first contact points. A portion of the second busbar electrode above a second diffusion pattern is electrically contacted with the second diffusion pattern by second contact points. The first finger electrode and the second finger electrode are respectively and electrically contacted with the first diffusion pattern and the second diffusion pattern.

Abstract: A back contact solar cell includes a first main busbar electrode, a second main busbar electrode, a plurality of first finger electrodes and a plurality of second finger electrodes, all of which are disposed on a back surface of the back contact solar cell and extending along a first direction. The back contact solar cell further includes a first sub-busbar electrode and a second sub-busbar electrode, which are extending along a second direction. The first finger electrodes are electrically connected to an N-type doped region, and the second finger electrodes are electrically connected to a P-type doped region. The first sub-busbar electrode is electrically connected to the first main busbar electrode and the first finger electrodes. The second sub-busbar electrode is electrically connected to the second main busbar electrode and the second finger electrodes.

Abstract: A method for manufacturing a front electrode of a solar cell and a solar cell device manufactured by the same method are provided. The method includes steps of providing a substrate; performing a first screen printing process to form at least one first electrode over the substrate; and performing a second screen printing process to form at least one row of a second electrode structure over the substrate. The first electrode is formed with a strip body and a plurality of salients connected to the strip body. The second electrode structure has a plurality of sections of finger electrodes, wherein first ends of the finger electrodes directly contact with first surfaces of the salients of the first electrode, respectively, without extending to the strip body.

Abstract: A method for forming shallow trench isolation structures is provided. The method comprises the following steps: providing a substrate with a “v” shaped trench, forming a first dielectric layer to cover the upper portion of the inner wall of the trench; conducting the first etching process to pull back the uncovered inner wall of the trench; removing the first dielectric layer; and forming a second dielectric layer to cover the trench and form a void inside the trench.

Abstract: Fabrication of a bottle-shaped trench is disclosed. A semiconductor substrate with a trench therein is provided. An ion-doped barrier layer is formed in the trench, exposing the upper portion surfaces of the sidewall of the trench. An ion implantation is performed on the upper portion surfaces of the sidewall of the trench to reduce the oxidation rate in the substrate near the upper portion of the trench. The ion-doped barrier layer is removed, exposing the lower portion and bottom surfaces of the sidewall of the trench. A thermal oxidation treatment is performed, forming an oxide layer on the surface of the trench. The thickness of the oxide layer on the upper portion of the sidewall surface is much thinner than that of the oxide layer on the lower portion of the sidewall surface or that of the bottom surface. A bottle-shaped trench is formed by removing the oxide layer.

Abstract: A semiconductor device having a transistor and a storage capacitor. The transistor includes source and drain regions formed on a substrate. The storage capacitor is coupled to the transistor. The storage capacitor is formed from a bottle-shaped trench and having an Epi-Si layer grown inside the trench to form at least part of one of the source and drain regions. The Epi-Si layer can be selectively grown inside the trench from portions of the substrate such that the Epi-Si layer is used to define a bottle-shape for the trench.

Abstract: A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

Abstract: A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.