Abstract: The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

Abstract: A heat dissipating device includes a main body and a working fluid. The main body has a plurality of hollow chambers formed therein. The working fluid is disposed in the plurality of hollow chambers. The plurality of hollow chambers may be communicated or not communicated with each other.

Abstract: The present invention relates to a heat dissipation device, including at least one semiconductor device, at least one first substrate and a cooling substance. The first substrate has a first surface, a second surface and at least one hole, wherein the semiconductor device is located on the first surface of the first substrate, and the hole is opened at the second surface of the first substrate and corresponds to the semiconductor device. The cooling substance is used for flowing in the hole and taking away heat from the semiconductor device, wherein the cooling substance is in contact with the first substrate. Thereby, the temperature of the semiconductor device can be reduced efficiently.

Abstract: The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved.

Abstract: A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.