Abstract: In one embodiment of the invention, a method to image a probe array is described that includes focusing on a plurality of fiducials on a surface of an array. The method utilizes obtaining the best z position of the fiducials and using a surface fitting algorithm to produce a surface fit profile. One or more surface non-flatness parameters can be adjusted to improve the flatness image of the array surface to be imaged.

Abstract: The present invention generally relates to microfabricated devices for carrying out and controlling chemical reactions and analysis. In particular, the present invention provides systems, methods, devices and computer software products related to multiplex liquid handling systems utilizing lab cards related to biological assays.

Abstract: The present invention generally relates to microfluidic devices for carrying out and controlling chemical reactions and analysis. In particular, the present invention provides systems, method, and devices related to lab cards.

Abstract: The present invention generally relates to microfluidic devices for carrying out and controlling chemical reactions and analysis. In particular, the present invention provides systems, methods, and devices for controlling lab cards.

Abstract: In one aspect of the invention, systems, methods, and devices are provided for creating microfluidic and nanofluidic structures. In some embodiments, such systems, methods, and devices are used to create features with high aspect ratios in lab cards.

Abstract: In one aspect of the invention, systems, methods, and devices are provided for handling liquid. In some embodiments, such systems, methods, and devices are used to combine fluids while removing gaseous bubbles.

Abstract: In one aspect of the invention, systems methods, and devices are provided for handling liquid. In some embodiments, such systems, methods, and devices are used to process reagent biochemical reactions.

Abstract: The signal-to-noise ratio of a magnetic recording medium having a thin magnetic layer is improved by adjusting the deposition conditions of the underlayer so that the magnetic layer is pseudo-epitaxially grown with a substantially uniform sub-micron-scale morphology. Uniform sub-micron-scale morphology can be attained by strategic selection of the underlayer and magnetic layer materials, and by controlling the underlayer deposition conditions so that the magnetic layer is epitaxially grown by a growth mechanism which is predominantly layer by layer. In an embodiment of the present invention, an underlayer comprising an alloy of chromium with vanadium, titanium or manganese, or an underlayer comprising a nickel-aluminum alloy, is sputter deposited at a pressure less than about 10 mTorr, substrate temperature greater than about 300.degree. C. and substrate bias greater than about 300 V, and a cobalt magnetic layer is epitaxially grown thereon, predominantly layer by layer.

Abstract: A process for fabricating a magnetic data storage medium includes formation of a controlled texture, either over an annular transducing head contact area or the entire surface of a substrate. The texture layer is formed by vacuum deposition of a texturing material onto a smooth surface of a non-magnetic substrate. The texturing material has a surface energy greater than that of the substrate, and the texturing material and substrate material have different linear coefficients of thermal expansion. Just before deposition of the texture layer, the substrate is heated to a temperature of 200-600.degree. C., then allowed to cool during texture layer deposition. The substrate and texture layer contract at different rates as they cool, inducing mechanical stresses within the texture layer sufficient to plastically deform the texture layer, creating multiple dome-like bumps.

Abstract: A hard magnetic alloy free of rare earths, consisting of 14-20% of a transition metal (Zr or Hf), 1-5% silicon, 0.3-5.6% boron, and the remainder essentially cobalt, the alloy having a microstructure substantially devoid of nonmagnetic phases and consisting of a high proportion of (Co-Si).sub.11 TM.sub.2 phase and a lesser proportion of (Co-Si).sub.23 TM.sub.6 phase, such phases being distributed throughout in a regular manner in a fine grain. Substitution agents of nickel or iron may be used for up to 10% of the cobalt, substitutional agents of vanadium or niobium may be used for up to 5% of the TM, and aluminum, copper, or gallium for up to 2% of the silicon. The alloy has high coercivity, high temperture stability, and excellent corrosion resistance. The alloy may be processed directly by extrusion with reduced requirements for boron and silicon.