Abstract: A method includes forming fins extending over a semiconductor substrate; forming a photoresist structure over the fins; patterning a serpentine cut pattern in the photoresist structure to form a cut mask, wherein the serpentine cut pattern extends over the fins, wherein the serpentine cut pattern includes alternating bridge regions and cut regions, wherein each cut region extends in a first direction, wherein each bridge region extends between adjacent cut regions in a second direction, wherein the second direction is within 30° of being orthogonal to the first direction; and performing an etching process using the cut mask as an etching mask.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, a groove pattern is formed in the hard mask layer, one or more first resist layers are formed over the hard mask layer having the groove pattern, a first photo resist pattern is formed over the one or more first resist layers, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer with the groove pattern are patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A method includes forming fins extending over a semiconductor substrate; forming a photoresist structure over the fins; patterning a serpentine cut pattern in the photoresist structure to form a cut mask, wherein the serpentine cut pattern extends over the fins, wherein the serpentine cut pattern includes alternating bridge regions and cut regions, wherein each cut region extends in a first direction, wherein each bridge region extends between adjacent cut regions in a second direction, wherein the second direction is within 30° of being orthogonal to the first direction; and performing an etching process using the cut mask as an etching mask.

Abstract: A method includes forming fins extending over a semiconductor substrate; forming a photoresist structure over the fins; patterning a serpentine cut pattern in the photoresist structure to form a cut mask, wherein the serpentine cut pattern extends over the fins, wherein the serpentine cut pattern includes alternating bridge regions and cut regions, wherein each cut region extends in a first direction, wherein each bridge region extends between adjacent cut regions in a second direction, wherein the second direction is within 30° of being orthogonal to the first direction; and performing an etching process using the cut mask as an etching mask.

Abstract: This invention is about a cell-penetrating drug carrier and the application thereof. The mentioned cell-penetrating drug carrier can approach the target cell through using a proper recognizable sequence, so that the cell-penetrating drug carrier can be used to specifically delivery wanted drug to target cell. Through carrying wanted drug into the cytoplasm of the target cell by cell-penetrating peptide, the drug accumulation volume in the target cell can be efficiently increased. Preferably, through using proper bioinert polymer, the cell-penetrating peptide and the recognizable sequence can be kept from been digested before approaching the target cell.

Abstract: This invention is about a cell-penetrating drug carrier and the application thereof. The mentioned cell-penetrating drug carrier can approach the target cell through using a proper recognizable sequence, so that the cell-penetrating drug carrier can be used to specifically delivery wanted drug to target cell. Through carrying wanted drug into the cytoplasm of the target cell by cell-penetrating peptide, the drug accumulation volume in the target cell can be efficiently increased. Preferably, through using proper bioinert polymer, the cell-penetrating peptide and the recognizable sequence can be kept from been digested before approaching the target cell.