Abstract: A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a rotating part, which the carrier part is mounted on the rotating part to carry a wafer, and the rotating part is configured to rotate with a predetermined axis. The flowing insulating material sprayer is above the wafer chuck and configured to spray a flowing insulating material to the wafer, and the wafer tilting lifting pin is configured to form a first acute angle between the wafer and direction of gravity.

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

Abstract: A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a rotating part, which the carrier part is mounted on the rotating part to carry a wafer, and the rotating part is configured to rotate with a predetermined axis. The flowing insulating material sprayer is above the wafer chuck and configured to spray a flowing insulating material to the wafer, and the wafer tilting lifting pin is configured to form a first acute angle between the wafer and direction of gravity.

Abstract: A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend from the upper surface to the lower surface, which the recess exposes the conducting pad. A part of the isolation layer is disposed in the recess with an opening to expose the conducting pad. A conductive layer is formed on the isolation layer and the conductive pad, and a photo-resist layer is spray coated on the conductive layer. The photo-resist layer is exposed and developed to expose the conductive layer, and the conductive layer is etched to form a redistribution layer. After stripping the photo-resist layer, a solder layer is formed on the isolation layer and the redistribution layer.

Abstract: A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend from the upper surface to the lower surface, which the recess exposes the conducting pad. A part of the isolation layer is disposed in the recess with an opening to expose the conducting pad. A conductive layer is formed on the isolation layer and the conductive pad, and a photo-resist layer is spray coated on the conductive layer. The photo-resist layer is exposed and developed to expose the conductive layer, and the conductive layer is etched to form a redistribution layer. After stripping the photo-resist layer, a solder layer is formed on the isolation layer and the redistribution layer.

Abstract: An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least one optoelectronic device is formed in the substrate; forming an insulating layer on the substrate; forming a conducting layer on the insulating layer on the substrate, wherein the conducting layer is electrically connected to the at least one optoelectronic device; and spraying a solution of light shielding material on the second surface of the substrate to form a light shielding layer on the second surface of the substrate.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.

Abstract: A method of fabricating a semiconductor stacked package is provided. A singulation process is performed on a wafer and a substrate, on which the wafer is stacked. A portion of the wafer on a cutting region is removed, to form a stress concentrated region on an edge of a chip of the wafer. The wafer and the substrate are then cut, and a stress is forced to be concentrated on the edge of the chip of the wafer. As a result, the edge of the chip is warpaged. Therefore, the stress is prevented from extending to the inside of the chip. A semiconductor stacked package is also provided.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a first light shielding layer disposed on the second surface of the substrate; and a second light shielding layer disposed on the first light shielding layer and directly contacting with the first light shielding layer, wherein a contact interface is between the first light shielding layer and the second light shielding layer.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer disposed on the second surface of the substrate, wherein the protection layer has an opening; a conducting bump disposed on the second surface of the substrate and filled in the opening; a conducting layer disposed between the protection layer and the substrate, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump; and a light shielding layer disposed on the protection layer, wherein the light shielding layer does not contact with the conducting bump.

Abstract: The embodiment provides a package structure for a chip and a method for fabricating the same. The package structure for the chip includes a chip having a substrate and a bonding pad structure. The chip has an upper surface and a lower surface. An upper packaging layer covers the upper surface of the chip. A spacer layer is between the upper packaging layer and the chip. A conductive path is electrically connected to the bonding pad structure. An anti-reflective layer is disposed between the spacer layer and the upper packaging layer. An overlapping region is between the anti-reflective layer and the spacer layer.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer located on the second surface of the substrate, wherein the protection layer has an opening; a light shielding layer located on the second surface of the substrate, wherein a portion of the light shielding layer extends into the opening of the protection layer; a conducting bump disposed on the second surface of the substrate and filled in the opening of the protection layer; and a conducting layer located between the substrate and the protection layer, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump.

Abstract: The present invention provides a chip package, including: a chip having a semiconductor device thereon; a cap layer over the semiconductor device; a spacer layer between the chip and the cap layer, wherein the spacer layer surrounds the semiconductor device and forms a cavity between the chip and the cap layer; and an anti-reflective layer between the cap layer and the chip, wherein the anti-reflective layer has a overlapping region with the spacer layer and extends into the cavity. Furthermore, a method for fabricating a chip package is also provided.

Abstract: According to an embodiment of the invention, a chip package is provided, which includes: a substrate having a first surface and a second surface; an optical device between the first surface and the second surface of the substrate; a protection layer formed on the second surface of the substrate, wherein the protection layer has at least an opening; at least a conducting bump formed in the opening of the protection layer and electrically connected to the optical device; and a light shielding layer formed on the protection layer, wherein the light shielding layer is further extended onto a sidewall of the opening of the protection layer.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding layer disposed on the second surface and having a second alignment mark, wherein the second alignment mark corresponds to the first alignment mark.

Abstract: A chip package includes: a substrate having a first and a second surfaces; an optical device on the first surface; a conducting layer on the second surface; a passivation layer on the second surface and the conducting layer, wherein the passivation layer has an opening exposing the conducting layer; a conducting bump on the second surface and having a bottom and an upper portions, wherein the bottom portion is disposed in the opening and electrically contacts the conducting layer, and the upper portion is located outside of the opening and extends along a direction away from the opening; a recess extending from a surface of the conducting bump toward an inner portion of the conducting bump; and a light shielding layer on the second surface, extending under the upper portion, and partially located in the recess and overlapping a portion of the conducting bump.

Abstract: An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least one optoelectronic device is formed in the substrate; forming an insulating layer on the substrate; forming a conducting layer on the insulating layer on the substrate, wherein the conducting layer is electrically connected to the at least one optoelectronic device; and spraying a solution of light shielding material on the second surface of the substrate to form a light shielding layer on the second surface of the substrate.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a first light shielding layer disposed on the second surface of the substrate; and a second light shielding layer disposed on the first light shielding layer and directly contacting with the first light shielding layer, wherein a contact interface is between the first light shielding layer and the second light shielding layer.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.