Patents by Inventor Chuan-Jung Wang

Chuan-Jung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of making a polysilicon barrier layer in a self-aligned contact module
    Patent number: 5480814
    Abstract: A method for forming a metal contact in a self aligned contact region over a impurity region in a substrate which comprises forming a doped polysilicon layer over the device surface except in a contact area. A thin polysilicon barrier layer and a metal layer, preferably tungsten, are then formed over the polysilicon layer and the contact area. The resulting metal contact has superior step coverage, lower resistivity, and maintains the shallow junction depth of buried impurity regions.
    Type: Grant
    Filed: December 27, 1994
    Date of Patent: January 2, 1996
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shou-Gwo Wuu, Mong-Song Liang, Chuan-Jung Wang, Chung-Hui Su