Abstract: The invention provides a semiconductor structure, which comprises a plurality of metal circuit layers stacked with each other, the multi-layer metal circuit layer comprises an aluminum circuit layer which is located at the position closest to a surface among the plurality of circuit layers, the material of the aluminum circuit layer is made of aluminum, and the aluminum circuit layer comprises a concave portion.

Abstract: A method for fabricating a semiconductor device includes the steps of first defining a scribe line on a front side of a wafer, in which the wafer includes an inter-metal dielectric (IMD) layer disposed on a substrate and an alternating stack disposed on the IMD layer. Next, part of the alternating stack is removed to form a trench on the front side of the wafer, a dielectric layer is formed in the trench, and then a dicing process is performed along the scribe line from a back side of the wafer to divide the wafer into chips.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a wafer, forming a scribe line on a front side of the wafer, performing a plasma dicing process to dice the wafer along the scribe line without separating the wafer completely, performing a laminating process to form a tape on the front side of the wafer, performing a grinding process on a backside of the wafer, and then performing an expanding process to divide the wafer into chips.

Abstract: A semiconductor device includes a substrate having a bonding area and a pad area, a first inter-metal dielectric (IMD) layer on the substrate, a metal interconnection in the first IMD layer, a first pad on the bonding area and connected to the metal interconnection, and a second pad on the pad area and connected to the metal interconnection. Preferably, the first pad includes a first portion connecting the metal interconnection and a second portion on the first portion, and the second pad includes a third portion connecting the metal interconnection and a fourth portion on the third portion, in which top surfaces of the second portion and the fourth portion are coplanar.

Abstract: A method for fabricating a micro display device includes the steps of providing a wafer comprising a first area, a second area, and a third area, forming first bonding pads on the first area, forming second bonding pads on the second area, and forming third bonding pads on the third area. Preferably, the first bonding pads and the second bonding pads are made of different materials and the first bonding pads and the third bonding pads are made of different materials.