Abstract: A touch panel structure is provided. The touch panel structure includes a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis includes one selected from a group consisting of c-axis (0001), a-axis (1210), a-axis (1 120), a-axis (2110), a-axis (1120), a-axis (21 10), a-axis (1210), m-axis (1010), m-axis (1100), m-axis (0110), m-axis (1010), m-axis (1100), m-axis (0110), r-axis (1011), r-axis (1011), r-axis (0111), r-axis (011 1), r-axis (1101) and r-axis (1101), the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; and a sensing module including a first sensing layer directly disposed on the sapphire substrate.

Abstract: A pad conditioning tool includes a sapphire chip having a side surface defining a polishing surface and a plurality of sapphire grains formed on the polishing surface in an integral manner. Each of the sapphire grains had a three-dimensional geometric structure. The sapphire grains are arranged on the polishing surface in a specific form so as to possess a specific pattern.

Abstract: A pad conditioning tool includes a sapphire chip having a side surface defining a polishing surface and a plurality of sapphire grains formed on the polishing surface in an integral manner. Each of the sapphire grains had a three-dimensional geometric structure. The sapphire grains are arranged on the polishing surface in a specific form so as to possess a specific pattern.

Abstract: The present invention provides a method for manufacturing a corundum substance, comprising steps of providing a corundum crystal having an a-axis and a growth along the a-axis; and obtaining the corundum substance from the corundum crystal in a particular direction.

Abstract: A touch panel structure is provided. The touch panel structure includes a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis includes one selected from a group consisting of c-axis (0001), a-axis (1 210), a-axis (1 1 20), a-axis (2 110), a-axis ( 1120), a-axis ( 21 10), a-axis ( 12 10), m-axis ( 1010), m-axis ( 1100), m-axis (01 10), m-axis (10 10), m-axis (1 100), m-axis (0 110), r-axis (10 11), r-axis ( 101 1), r-axis (01 11), r-axis (0 11 1), r-axis (1 10 1) and r-axis ( 1101), the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; and a sensing module including a first sensing layer directly disposed on the sapphire substrate.