Abstract: A semiconductor structure including a substrate, a light sensing device and a light-guiding structure is provided. The light sensing device is disposed in the substrate. The light-guiding structure is located above the light sensing device. The light-guiding structure has a top surface and a bottom surface opposite to each other, and the bottom surface is closer to the substrate than the top surface. A position of a minimum width of the light-guiding structure is located between the top surface and the bottom surface.

Abstract: A proton acceleration system is provided for accelerating protons within a target. The system includes a laser source generating a laser beam having a wavelength ?L and intensity and a target formed of foil having a selected thickness. The target is irradiated by the laser beam and transformed into a plasma that has a target density. This causes a treatment energy to be emitted from the foil due to the irradiation. The thickness of the foil of the target is selected so that the foil has a thickness within a range of optimal thickness ?s to 2×?s, wherein ?s is less than the laser wavelength and is a function of the laser intensity, laser wavelength, and target density sufficient to achieve radiation pressure acceleration (RPA).

Abstract: A proton acceleration system is provided for accelerating protons within a target. The system includes a laser source generating a laser beam having a wavelength ?L and intensity and a target formed of foil having a selected thickness. The target is irradiated by the laser beam and transformed into a plasma that has a target density. This causes a treatment energy to be emitted from the foil due to the irradiation. The thickness of the foil of the target is selected so that the foil has a thickness within a range of optimal thickness ?s to 2×?s, wherein ?s is less than the laser wavelength and is a function of the laser intensity, laser wavelength, and target density sufficient to achieve radiation pressure acceleration (RPA).