Patents by Inventor Chuan-Wen Wang

Chuan-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devices
    Patent number: 11444215
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: September 13, 2022
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
    Publication number: 20200152809
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: SHUN-MING CHEN, CHIEN-CHIH HUANG, JOEL P. DESOUZA, AUGUSTIN J. HONG, JEEHWAN KIM, CHIEN-YEH KU, DEVENDRA K. SADANA, CHUAN-WEN WANG
  • Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devices
    Patent number: 10593815
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: March 17, 2020
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
    Publication number: 20180175225
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Application
    Filed: February 12, 2018
    Publication date: June 21, 2018
    Inventors: SHUN-MING CHEN, CHIEN-CHIH HUANG, JOEL P. DESOUZA, AUGUSTIN J. HONG, JEEHWAN KIM, CHIEN-YEH KU, DEVENDRA K. SADANA, CHUAN-WEN WANG
  • Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
    Patent number: 9917215
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: March 13, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
    Publication number: 20160300965
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Application
    Filed: June 22, 2016
    Publication date: October 13, 2016
    Inventors: SHUN-MING CHEN, CHIEN-CHIH HUANG, JOEL P. DESOUZA, AUGUSTIN J. HONG, JEEHWAN KIM, CHIEN-YEH KU, DEVENDRA K. SADANA, CHUAN-WEN WANG
  • Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
    Patent number: 9379259
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: June 28, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
    Publication number: 20140124795
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Application
    Filed: November 15, 2012
    Publication date: May 8, 2014
    Applicants: Bay Zu Precision Co., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
    Publication number: 20140127853
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Application
    Filed: November 5, 2012
    Publication date: May 8, 2014
    Applicants: Bay Zu Precision Co., Ltd., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang