Patents by Inventor Chuan-Yi Wu
Chuan-Yi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7858969Abstract: An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.Type: GrantFiled: April 20, 2007Date of Patent: December 28, 2010Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Yi-Yun Tsai, Chuan-Yi Wu, Chin-Chuan Lai
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Publication number: 20080224139Abstract: A thin film transistor including a substrate, a gate, a gate insulator layer, a semiconductor layer, an ohmic contact layer, a source and a drain is provided. The gate is disposed on the substrate while the gate insulator layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the gate insulator layer above the gate. The semiconductor layer includes an undoped amorphous silicon layer and a first undoped microcrystalline silicon (?c-Si) layer, wherein the first undoped ?c-Si layer is disposed on the undoped amorphous silicon layer. The ohmic contact layer is disposed on part of the semiconductor layer and the source and the drain are disposed on the ohmic contact layer. Therefore, the thin film transistor has better quality control and electrical characteristics.Type: ApplicationFiled: July 11, 2007Publication date: September 18, 2008Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Chin-Chuan Lai, Chuan-Yi Wu, Yi-Yun Tsai
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Patent number: 7405113Abstract: A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.Type: GrantFiled: August 1, 2007Date of Patent: July 29, 2008Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Chuan-Yi Wu, Chin-Chuan Lai, Yung-Chia Kuan, Wei-Jen Tai
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Publication number: 20080157064Abstract: An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.Type: ApplicationFiled: April 20, 2007Publication date: July 3, 2008Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Yi-Yun Tsai, Chuan-Yi Wu, Chin-Chuan Lai
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Publication number: 20070269940Abstract: A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.Type: ApplicationFiled: August 1, 2007Publication date: November 22, 2007Inventors: CHUAN-YI WU, Chin-Chuan Lai, Yung-Chia Kuan, Wei-Jen Tai
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Publication number: 20070262379Abstract: Aluminum gate electrode parasitic resistance and capacitance delay suffers performance, and even makes the signal loss to high-resolution and small-size requests for thin film transistor liquid crystal display. An important technology employed in manufacturing thin film transistor is to convert surface of glass substrate into a silicon nitride layer, and subsequently to plate with one of low resistant copper, silver, copper alloy and silver alloy, and finally to form the thin film transistor on the substrate.Type: ApplicationFiled: May 15, 2006Publication date: November 15, 2007Inventors: Chin-Chuan Lai, Hsian-Kun Chiu, Chuan-Yi Wu
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Publication number: 20070264747Abstract: A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.Type: ApplicationFiled: May 15, 2006Publication date: November 15, 2007Inventors: Kuo-Hsi Yen, Cheng-Wei Chou, Hsiao-Wen Zan, Chuan-Yi Wu
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Patent number: 7291885Abstract: A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.Type: GrantFiled: August 29, 2005Date of Patent: November 6, 2007Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Chuan-Yi Wu, Chin-Chuan Lai, Yung-Chia Kuan, Wei-Jen Tai
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Publication number: 20070158647Abstract: A junction structure of an organic semiconductor device including an organic semiconductor layer, a conductive layer and a modifying layer is provided. The modifying layer is formed between the organic semiconductor layer and the conductive layer, wherein the modifying layer includes an inorganic compound or an organic complex compound. An organic thin film transistor including a gate, a source/drain, a dielectric layer, an organic semiconductor layer and at least a modifying layer is also provided. The gate is electrically isolated from the source/drain. The dielectric layer is disposed between the gate and the source/drain. The organic semiconductor layer is disposed between the source and the drain. The modifying layer is disposed between the organic semiconductor layer and the source/drain, wherein the modifying layer includes an inorganic compound or an organic complex compound.Type: ApplicationFiled: August 25, 2006Publication date: July 12, 2007Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Fang-Chung Chen, Chiao-Shun Chuang, Dong-Sian Chen, Li-Jen Kung, Yung-Sheng Lin, Chuan-Yi Wu
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Patent number: 7229863Abstract: A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer are formed on the patterned semiconductor layer in sequence. The second conductive layer is patterned such that each side of thereof above the gate has a taper profile and the first conductive layer is exposed. A first plasma process is performed to transform the surface and the taper profile of the second conductive layer into a first protection layer. The first conductive layer not covered by the first protection layer and the second conductive layer is removed to form a source/drain. The source/drain is with fine dimensions and the diffusion of metallic ions from the second conductive layer to the patterned semiconductor layer can be avoided.Type: GrantFiled: October 25, 2005Date of Patent: June 12, 2007Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Chuan-Yi Wu, Yung-Chia Kuan, Chia-Chien Lu, Chin-Chuan Lai
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Publication number: 20070120929Abstract: An ink jet process includes: providing a substrate; performing a ink jet step for spraying a paste on the surface of the substrate; and performing an in-situ and partial heating process to directly heat the paste sprayed on the surface of the substrate and control the shape and location of the paste.Type: ApplicationFiled: November 29, 2005Publication date: May 31, 2007Inventors: Chuan-Yi Wu, Yi-Pen Lin
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Publication number: 20070093003Abstract: A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer are formed on the patterned semiconductor layer in sequence. The second conductive layer is patterned such that each side of thereof above the gate has a taper profile and the first conductive layer is exposed. A first plasma process is performed to transform the surface and the taper profile of the second conductive layer into a first protection layer. The first conductive layer not covered by the first protection layer and the second conductive layer is removed to form a source/drain. The source/drain is with fine dimensions and the diffusion of metallic ions from the second conductive layer to the patterned semiconductor layer can be avoided.Type: ApplicationFiled: October 25, 2005Publication date: April 26, 2007Inventors: Chuan-Yi Wu, Yung-Chia Kuan, Chia-Chien Lu, Chin-Chuan Lai
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Publication number: 20070045734Abstract: A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.Type: ApplicationFiled: August 29, 2005Publication date: March 1, 2007Inventors: Chuan-Yi Wu, Chin-Chuan Lai, Yung-Chia Kuan, Wei-Jen Tai
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Publication number: 20070000609Abstract: An etching apparatus, for etching copper or silver, which includes a hydrogen peroxide tank, an ammonium hydroxide tank, a water tank, an etching tank, a piping system and a temperature control device, is provided. The piping system connects the hydrogen peroxide tank, the ammonium hydroxide tank, the water tank to the etching tank, and the temperature control device is disposed around the hydrogen peroxide tank, the ammonium hydroxide tank and the etching tank to maintain the temperatures of them below the room temperature and above 12 degree centigrade. An etching process is also provided. First, hydrogen peroxide and ammonium hydroxide having a temperature in a temperature-range below the room temperature and above 12 degree centigrade, is provided. Then, water, hydrogen peroxide and ammonium hydroxide are mixed to be an etchant with a temperature maintained in said temperature temperature-range. Next, the etchant is utilized for etching copper or silver.Type: ApplicationFiled: May 12, 2006Publication date: January 4, 2007Inventors: Wei-Jen Tai, Chuan-Yi Wu, Mei-Kuei Tseng, Ming-Tan Hsu
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Publication number: 20060286804Abstract: A method for forming a patterned material layer comprises the following steps. First, a material layer is formed on a substrate, and then a patterned positive photoresist layer is formed on the material layer. Next, the material layer is etched by using the patterned positive photoresist layer as a mask. Afterwards, a developing process is performed to remove the patterned positive photoresist layer. As mentioned above, the cost by using the method of the present invention can be reduced.Type: ApplicationFiled: June 15, 2005Publication date: December 21, 2006Inventors: Chuan-Yi Wu, Chin-Long Chen, Yung-Chia Kuan