Abstract: A semiconductor light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer and an active layer is provided. The active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer is a multi-quantum well structure consisting of well layers and barrier layers interlaced and stacked to each other. The well layers near the n-type semiconductor layer at least include a first well layer having a first thickness, and the well layers near the p-type semiconductor layer at least include a second well layer having a second thickness smaller than the first thickness, so that the ability to restrict electrons within the area of the active layer near the n-type semiconductor layer is increased, and the conversion efficiency of the active layer is enhanced. There is a differential ?d1 between the first thickness and the second thickness, wherein 0 nm<?d1?10 nm.

Abstract: A semiconductor light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer and an active layer is provided. The active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer is a multi-quantum well structure consisting of well layers and barrier layers interlaced and stacked to each other. The well layers near the n-type semiconductor layer at least include a first well layer having a first thickness, and the well layers near the p-type semiconductor layer at least include a second well layer having a second thickness smaller than the first thickness, so that the ability to restrict electrons within the area of the active layer near the n-type semiconductor layer is increased, and the conversion efficiency of the active layer is enhanced. There is a differential ?d1 between the first thickness and the second thickness, wherein 0 nm<?d1?10 nm.