Abstract: The invention provides a method for manufacturing an active matrix liquid crystal displaying device having a plurality of thin film transistors using five masks. A plurality of gate electrodes are formed using a first mask. A plurality of etch stoppers are formed over the gate electrodes using a second mask. A plurality of chain electrodes and a plurality of source electrodes are formed using a third mask. A passivation layer including via holes is formed using a fourth mask. A plurality of pixel electrodes are formed using a fifth mask.

Abstract: A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.