Abstract: Provided is an anti-fuse structure, an anti-fuse array and a method for forming the same. The anti-fuse structure includes: a substrate; a switching device including a first gate structure, a second gate structure, a first doped region, a second doped region and a third doped region, the first and the second gate structures being arranged on the substrate, the first and the second doped regions being respectively located in the substrate at two sides of the first gate structure, and the second and the third doped regions being respectively located in the substrate at two sides of the second gate structure; and an anti-fuse device including a third gate structure and the third doped region, the second and the third gate structures being respectively located on the substrate at two sides of the third doped region, and the doped regions being configured to form a source or a drain, respectively.

Abstract: A delay measuring circuit includes a control oscillation module with its input terminal connected to its output terminal, which sequentially generates a number of time delay signals with a cycle time T after receiving first enable control signal; a target oscillating module receives a second enabling signal delayed by a first preset threshold than the first enabling signal; after the first preset time T1 is disconnected from the ground terminal/power supply terminal, each stage of the target unit in the target oscillating module connects at the second preset time T2. The level of the target unit turns over at first preset time T1, and target unit maintains logic level for second preset time T2; T1+T2=T/2, and N is an odd integer. So leakage current is reduced and mutual influence of the action current between the adjacent two-level target units are avoided, thus improving ring oscillator performance and reliability.

Abstract: An anti-fuse array structure, an operation method thereof and a memory are provided. The anti-fuse array structure includes an anti-fuse array area and a selection circuit area. The anti-fuse array area includes a plurality of anti-fuse cells, and the selection circuit area includes a plurality of selection transistors. The selection circuit area is located on at least one side of the anti-fuse array area.

Abstract: An anti-fuse cell structure includes: a first anti-fuse transistor having a first end and a second end; a first selection transistor having a first end and a second end, the first end of the first selection transistor being electrically connected to the second end of the first anti-fuse transistor; and a Blow Enable (BE) line electrically connected to a first end of the first anti-fuse transistor, and configured to perform programming operation on the first anti-fuse transistor.

Abstract: A delay measuring circuit includes a control oscillation module with its input terminal connected to its output terminal, which sequentially generates a number of time delay signals with a cycle time T after receiving first enable control signal; a target oscillating module receives a second enabling signal delayed by a first preset threshold than the first enabling signal; after the first preset time T1 is disconnected from the ground terminal/power supply terminal, each stage of the target unit in the target oscillating module connects at the second preset time T2. The level of the target unit turns over at first preset time T1, and target unit maintains logic level for second preset time T2; T1+T2=T/2, and N is an odd integer. So leakage current is reduced and mutual influence of the action current between the adjacent two-level target units are avoided, thus improving ring oscillator performance and reliability.

Abstract: An anti-fuse structure includes: a first unit including a first selection transistor, a first anti-fuse (AF) cell and a second AF cell; and a second unit including a second selection transistor, a third AF cell and a fourth AF cell. The first unit and second unit share an active region, which is provided with a first extension part and a second extension part which are independent of each other at a first side, and provided with a third extension part and a fourth extension part which are independent of each other at a second side, the first side being opposite to the second side. The first AF cell is arranged at the first extension part, the second AF cell is arranged at the second extension part, the third AF cell is arranged at the third extension part, and the fourth AF cell is arranged at the fourth extension part.

Abstract: An anti-fuse cell structure includes: a first anti-fuse transistor having a first end and a second end; a first selection transistor having a first end and a second end, the first end of the first selection transistor being electrically connected to the second end of the first anti-fuse transistor; and a Blow Enable (BE) line electrically connected to a first end of the first anti-fuse transistor, and configured to perform programming operation on the first anti-fuse transistor.

Abstract: Provided is an anti-fuse structure, an anti-fuse array and a method for forming the same. The anti-fuse structure includes: a substrate; a switching device including a first gate structure, a second gate structure, a first doped region, a second doped region and a third doped region, the first and the second gate structures being arranged on the substrate, the first and the second doped regions being respectively located in the substrate at two sides of the first gate structure, and the second and the third doped regions being respectively located in the substrate at two sides of the second gate structure; and an anti-fuse device including a third gate structure and the third doped region, the second and the third gate structures being respectively located on the substrate at two sides of the third doped region, and the doped regions being configured to form a source or a drain, respectively.

Abstract: An anti-fuse structure includes: a first unit including a first selection transistor, a first anti-fuse (AF) cell and a second AF cell; and a second unit including a second selection transistor, a third AF cell and a fourth AF cell. The first unit and second unit share an active region, which is provided with a first extension part and a second extension part which are independent of each other at a first side, and provided with a third extension part and a fourth extension part which are independent of each other at a second side, the first side being opposite to the second side. The first AF cell is arranged at the first extension part, the second AF cell is arranged at the second extension part, the third AF cell is arranged at the third extension part, and the fourth AF cell is arranged at the fourth extension part.

Abstract: An anti-fuse array structure, an operation method thereof and a memory are provided. The anti-fuse array structure includes an anti-fuse array area and a selection circuit area. The anti-fuse array area includes a plurality of anti-fuse cells, and the selection circuit area includes a plurality of selection transistors. The selection circuit area is located on at least one side of the anti-fuse array area.