Abstract: A compound according to Formula I and devices incorporating the same are described. The compound according to Formula I can have the structure wherein R2 represents mono, di, tri, tetra, penta substitutions or no substitution; R3, R4 and R5 each represent mono, di, tri, tetra substitutions or no substitution; wherein R9 represents mono, di, tri substitutions or no substitution; wherein R1 is selected from the group consisting of alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and R2, R3, R4 R5 and R9 are each independently selected from the group consisting of all options for R1, hydrogen, deuterium, halide, amino, silyl, and combinations thereof; and wherein n is 1 or 2. The device can include the compound according to Formula I in an organic layer.

Abstract: A compound according to Formula I and devices incorporating the same are described. The compound according to Formula I can have the structure wherein R2 represents mono, di, tri, tetra, penta substitutions or no substitution; wherein R3, R4 and R5 each represent mono, di, tri, tetra substitutions or no substitution; wherein R9 represents mono, di, tri substitutions or no substitution; wherein R1 is selected from the group consisting of alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and R2, R3, R4 R5 and R9 are each independently selected from the group consisting of all options for R1, hydrogen, deuterium, halide, amino, silyl, and combinations thereof; and wherein n is 1 or 2. The device can include the compound according to Formula I in an organic layer.