Abstract: A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Abstract: A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.

Abstract: The present invention is a positive resist material containing: an acid generator, being a sulfonium salt having at least one fluorine atom in both an anion moiety of a sulfonate ion bonded to a polymer main chain and a cation moiety of a sulfonium ion; and a quencher, being a sulfonium salt containing an anion moiety of a carboxylate ion, a sulfonamide ion, an alkoxide ion, or a sulfonate ion having no fluorine atom at a position and a cation moiety of a sulfonium ion, the quencher having a total of two or more fluorine atoms in the anion moiety and the cation moiety. An object of the present invention is to provide: a positive resist material having sensitivity higher than that of conventional positive resist materials, and having little dimensional variation (CDU) in an exposure pattern; and a patterning process using the positive resist material.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3?R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(?O)—O—Z?—, Z? is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(?O)—O—Z?—, Z? is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.

Abstract: A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3?R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.