Abstract: A method for fabricating a thin film transistor includes providing a substrate (100); forming a semiconductor layer (105) over the substrate (100); forming a source-drain metal layer (106) over the semiconductor layer (105); applying one patterning process to the semiconductor layer (105) and the source-drain metal layer (106) to form an active layer (1), a source electrode (2), and a drain electrode (3); forming a gate insulating layer (101) and an interlayer insulating layer (102) that cover the active layer (1), the source electrode (2), and the drain electrode (3); applying a patterning process to the interlayer insulating layer (102) to form a first window (10) in the interlayer insulating layer (102) to expose a portion of the gate insulating layer (101); and forming a gate electrode (4) in the first window (10). An orthogonal projection of the gate electrode (4) on the substrate (100) is in an orthogonal projection of the active layer (1) on the substrate (100).

Abstract: A display panel and a display device are provided by embodiments of the present disclosure, relating to a field of display technology. The display panel comprises a pixel array substrate and an opposite substrate which is located opposite to the pixel array substrate, the pixel array substrate comprising a pixel array and a substrate on which the pixel array is arranged; the pixel array comprises a plurality of columns of sub-pixels, a light-shielding wall being provided between any two adjacent columns of sub-pixels; and a first length of the light-shielding wall in a direction perpendicular to the substrate is smaller than a spacing between the pixel array substrate and the opposite substrate. By providing the light-shielding wall which is enabled to shield sub-pixels(s) so as to decrease a visual range of the display panel, between any two adjacent columns of sub-pixels within the pixel array, a peep-proof aim can be achieved by the embodiments of the present disclosure.

Abstract: Embodiments of the present disclosure discloses a touch panel; a plurality of second electrodes; a plurality of the first electrode leads for leading the first electrodes, which are connected to each other, out of a touch area; a plurality of the second electrode leads for leading the second electrodes, which are connected to each other, out of the touch area. The touch panel further includes at least one transparent conductive layer which is formed on at least one surface of each of the first and/or second electrode leads and which is formed in the same layer as at least one of the first and second electrodes, the first and second connecting wires. The embodiments of the present disclosure may prevent oxidation of the electrode leads and increase adhesion without increasing manufacture processes.

Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The method comprises: forming in sequence a light shielding layer, an insulating layer, and a semiconductor layer; and forming a pattern of the light shielding layer, the insulating layer, and the semiconductor layer in one patterning process. A polycrystalline silicon layer can be formed into an active layer and an amorphous silicon layer into the light shielding layer, by using only one mask. The number of masking processes is reduced by one, which simplifies a fabricating process of the thin film transistor.

Abstract: The present disclosure provides a counter substrate, a display panel, a display device, and fabricating method, further simplifying the fabricating process of the display panel by reducing the number of masking times required during the making of a spacer pattern and a frame light shielding pattern while achieving the frame light shielding function of the counter substrate and getting the counter substrate conductive with an array substrate. The fabricating method of the counter substrate comprises: forming a transparent electrode layer on a first base substrate; forming a black spacer pattern and a frame light shielding pattern at the same time on the transparent electrode layer, wherein the frame light shielding pattern comprises a first via hole that exposes a portion of the transparent electrode layer; and forming a conductive light shielding layer pattern in the first via hole.

Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Abstract: A color filter substrate, a display panel and a display device are provided. The color filter substrate includes a base plate and a color filter layer formed on the base plate, a photoluminescent layer arranged at a side of the color filter layer away from the base plate, and a brightness enhancement structure arranged at the side of the color filter layer away from the base plate. In the color filter substrate, by arranging the photoluminescent layer and the brightness enhancement structure at the side of the color filter layer away from the base plate, the color filter substrate has a better color gamut and the brightness at a light-outgoing side is increased.

Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The method comprises: forming in sequence a light shielding layer, an insulating layer, and a semiconductor layer; and forming a pattern of the light shielding layer, the insulating layer, and the semiconductor layer in one patterning process. A polycrystalline silicon layer can be formed into an active layer and an amorphous silicon layer into the light shielding layer, by using only one mask. The number of masking processes is reduced by one, which simplifies a fabricating process of the thin film transistor.

Abstract: A production process of a conductive material includes processing graphite oxide into a graphene suspension comprising graphene monolayer nanoflakes, and processing the graphene suspension and metal or metal oxide so as to provide a liquid comprising a composite as the conductive material.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.

Abstract: An array substrate and a method for fabricating the same, and a display device are disclosed. The array substrate comprises light-transmissive regions for display and shading regions, a plurality of thin film transistors are provided in the shading region, the thin film transistor comprises: a base substrate; an active layer, a gate insulating layer, a gate and a passivation layer sequentially provided on the base substrate; and a source and a drain provided on the passivation layer, the source and the drain comprise a conductive shading layer connected to the active layer and a copper layer provided on the conductive shading layer, the conductive shading layer is provided between the active layer and the copper layer, and at least a part of region of the shading region other than the source and the drain is provided with the conductive shading layer.

Abstract: This disclosure provides an array substrate, comprising a substrate plate, and a thin film transistor and a pixel electrode formed on the substrate plate, said thin film transistor comprising a source/drain electrode, an active region and a gate electrode stacked sequentially on said substrate plate, wherein said source/drain electrode and said pixel electrode are arranged in the same layer on the substrate plate. According to this disclosure, while the properties of a high reflectivity and a high aperture ratio are guaranteed, the times of the patterning process are decreased and the process steps are saved, resulting in an improved production tempo and an effectively controlled cost. This disclosure also provides a method for fabricating an array substrate, a liquid crystal display panel comprising said array substrate and a reflective liquid crystal display.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: A display panel and a display device are provided by embodiments of the present disclosure, relating to a field of display technology. The display panel comprises a pixel array substrate and an opposite substrate which is located opposite to the pixel array substrate, the pixel array substrate comprising a pixel array and a substrate on which the pixel array is arranged; the pixel array comprises a plurality of columns of sub-pixels, a light-shielding wall being provided between any two adjacent columns of sub-pixels; and a first length of the light-shielding wall in a direction perpendicular to the substrate is smaller than a spacing between the pixel array substrate and the opposite substrate. By providing the light-shielding wall which is enabled to shield sub-pixels(s) so as to decrease a visual range of the display panel, between any two adjacent columns of sub-pixels within the pixel array, a peep-proof aim can be achieved by the embodiments of the present disclosure.

Abstract: The invention provides a method for patterning a graphene layer and a method for manufacturing a display substrate. The method for patterning a graphene layer comprises: forming an isolation layer on a graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned photoresist layer to form a patterned graphene layer; and removing the patterned isolation layer. In the method of the invention, the unfavorable condition of the prior art may be avoided that a graphene film sloughs off or a photoresist remains on a graphene film when a photoresist material is peeled off, and the product yield can be improved in the case that the production cost is controlled.

Abstract: The invention provides a vinyl ether group-containing copolymer, preparation process and use thereof. The copolymer comprises of the structural units represented by the following general formulae I, II and III, wherein, R1 is O or HN, R2 is an alkyl group with a carbon atom number of 1-4, cyclohexyl or a group represented by the following general formula IV (m represents a positive integer of 1-3), n is a positive integer of 1-4, the molar numbers of the structural units represented by the general formulae I, II and III are x, y and z, respectively, and x:y:z=3-8:1-4:1-5, the weight average molecular weight of the copolymer is 5000-20000. A color light blocking agent added with the copolymer can increase sensitivity. Furthermore, the copolymer has solubility in an alkaline solution, and thus, the color light blocking agent added with the copolymer has a superior developing property.

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.