Patents by Inventor Chuch Jang

Chuch Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of interpoly oxides in a non-volatile memory device
    Publication number: 20040051134
    Abstract: Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.
    Type: Application
    Filed: September 12, 2002
    Publication date: March 18, 2004
    Inventors: Chuch Jang, Zhong Dong, Vei-Han Chan, Ching-Hwa Chen