Patents by Inventor Chuck Chen

Chuck Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7279707
    Abstract: A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end of the conductive line and surrounds a contact region. The spacers are disposed at the edge of the closed loop to cover the substrate between the conductive lines. The first doping regions are located in the substrate outside the closed loop and the spacers. The second doping regions are located in the substrate under the spacers. The contacts are electrically connected to the first doping regions within the contact regions. Because the spacers and the conductive lines are incorporated into a test key structure, the influence of spacers upon the entire device can be more accurately determined.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: October 9, 2007
    Assignee: United Microelectronics Corp.
    Inventors: Chuck Chen, Yo-Yi Gong, Le-Tien Jung
  • Publication number: 20060192200
    Abstract: A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end of the conductive line and surrounds a contact region. The spacers are disposed at the edge of the closed loop to cover the substrate between the conductive lines. The first doping regions are located in the substrate outside the closed loop and the spacers. The second doping regions are located in the substrate under the spacers. The contacts are electrically connected to the first doping regions within the contact regions. Because the spacers and the conductive lines are incorporated into a test key structure, the influence of spacers upon the entire device can be more accurately determined.
    Type: Application
    Filed: February 25, 2005
    Publication date: August 31, 2006
    Inventors: Chuck Chen, Yo-Yi Gong, Le-Tien Jung
  • Patent number: 6253646
    Abstract: A roller-type ratchet device is used for a wrench which includes a driving head defining a receiving hole and a plurality of actuating recesses. The ratchet device includes a driving body secured in the receiving hole to rotate with the driving head, a follower secured between the driving body and the driving head and having a plurality of fixed portions each mounted in a respective one of the actuating recesses, a plurality of locking members each secured in a respective one of the fixed portions of the follower to move therewith, and each pressing the driving body, and a direction control knob pivotally mounted on the driving head and engaged with the follower for moving each of the locking members in the respective actuating recess between different positions.
    Type: Grant
    Filed: March 9, 2000
    Date of Patent: July 3, 2001
    Inventor: Chuck (Chen-Tsai) Chang
  • Patent number: 6153361
    Abstract: A method of removing photoresist at the edge of waters in an integrated circuit the method comprising the following steps. A substrate having at least a MOS component region thereabove is provided. A photoresist layer is formed over the substrate. A pattern is defined on the photoresist layer by exposure and development. The photoresist layer at the edge of the substrate is removed by a chemical reagent and centrifugal effect.
    Type: Grant
    Filed: January 25, 1999
    Date of Patent: November 28, 2000
    Assignee: United Microelectronics Corp
    Inventors: Ming-Hua Liu, Chuck Chen, Shu-Ping Lin, Eddie Chen, Ming-Tzong Yung
  • Patent number: 5885895
    Abstract: A method of forming a self-aligned contact of a DRAM cell includes providing a substrate having a MOS transistor. The MOS transistor includes a gate and a source/drain region. A first insulating layer, a second insulating layer and a third insulating layer are formed over the surface of the substrate in succession. The third insulating layer is planarized. A contact window mask is formed above the third insulating layer. Using the contact window mask as a cover, the third insulating layer is removed using anisotropic dry etching and isotropic wet etching. Then, a portion of the second insulating layer and a portion of the first insulating layer are removed sequentially to expose the source/drain region so that a self-aligned contact is formed.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: March 23, 1999
    Assignee: United Microelectronics Corporation
    Inventors: Ming-Hua Liu, Chuck Chen
  • Patent number: 5380098
    Abstract: A sliding unit includes a load-receiving device for permitting a load to be received thereon, a guiding device slidably mounting thereon the load-receiving device for permitting a direct relative sliding motion therebetween, and a load-sharing device mounted between the load-receiving device and the guiding device and capable of being in a rolling motion therebetween for resulting in a rolling contact effect therebetween. Such sliding unit can meet the demand of a high positioning precision/a high movement stability/a smaller friction coefficient/a better rigidity/a better vibration-resistivity.
    Type: Grant
    Filed: November 4, 1993
    Date of Patent: January 10, 1995
    Assignee: Industrial Technology Research Institute
    Inventors: Rong-Hong Huang, Kun-Lung Tsai, Hsi-Yen Chen, Chuck Chen, Tju-Yin Chang