Patents by Inventor Chuck Dennison

Chuck Dennison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6930901
    Abstract: The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: August 16, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Todd Abbott, Jigish D. Tirvedi, Mike Violette, Chuck Dennison
  • Patent number: 6594172
    Abstract: The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
    Type: Grant
    Filed: November 19, 2001
    Date of Patent: July 15, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Todd Abbott, Jigish D. Trivedi, Mike Violette, Chuck Dennison
  • Patent number: 6535413
    Abstract: The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: March 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Todd Abbott, Jigish D. Trivedi, Mike Violette, Chuck Dennison
  • Publication number: 20030036258
    Abstract: The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
    Type: Application
    Filed: September 17, 2002
    Publication date: February 20, 2003
    Applicant: Micron Technology, Inc.
    Inventors: Todd Abbott, Jigish D. Trivedi, Mike Violette, Chuck Dennison
  • Publication number: 20020114180
    Abstract: The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
    Type: Application
    Filed: November 19, 2001
    Publication date: August 22, 2002
    Inventors: Todd Abbott, Jigish D. Trivedi, Mike Violette, Chuck Dennison