Patents by Inventor Chuck E. Hedberg

Chuck E. Hedberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of pulsed grounding source in a plasma reactor
    Patent number: 7297637
    Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: November 20, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Chuck E. Hedberg, Kevin G. Donohoe
  • Use of pulsed grounding source in a plasma reactor
    Patent number: 7059267
    Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: June 13, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Chuck E. Hedberg, Kevin G. Donohoe
  • Use of pulsed grounding source in a plasma reactor
    Publication number: 20020189761
    Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
    Type: Application
    Filed: August 14, 2002
    Publication date: December 19, 2002
    Inventors: Chuck E. Hedberg, Kevin G. Donohoe
  • Use of pulsed grounding source in a plasma reactor
    Publication number: 20020189544
    Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
    Type: Application
    Filed: August 14, 2002
    Publication date: December 19, 2002
    Inventors: Chuck E. Hedberg, Kevin G. Donohoe
  • Use of pulsed grounding source in a plasma reactor
    Patent number: 6485572
    Abstract: A method and apparatus for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: November 26, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Chuck E. Hedberg, Kevin G. Donohoe