Patents by Inventor Chuck Swoboda

Chuck Swoboda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating group-III nitride devices and devices fabricated using method
    Patent number: 7332365
    Abstract: A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: February 19, 2008
    Assignee: Cree, Inc.
    Inventors: Shuji Nakamura, Steven DenBaars, John Edmond, Chuck Swoboda, Umesh Mishra
  • Method for fabricating group-III nitride devices and devices fabricated using method
    Publication number: 20060049411
    Abstract: A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
    Type: Application
    Filed: May 18, 2004
    Publication date: March 9, 2006
    Inventors: Shuji Nakamura, Steven DenBaars, John Edmond, Chuck Swoboda, Umesh Mishra